Zobrazeno 1 - 10
of 36
pro vyhledávání: '"B Mohadjeri"'
Autor:
Bengt Gunnar Malm, M. Jargelius, Gunnar Landgren, H. Fosshaug, Pär Jönsson, J. Pejnefors, B. Mohadjeri, Mikael Östling, J.V. Grahn, Henry H. Radamson, M. Sanden, Yong-Bin Wang, M. Linder
Publikováno v:
Solid-State Electronics. 44:549-554
A low-complexity SiGe heterojunction bipolar transistor process based on differential epitaxy and in situ phosphorus doped polysilicon emitter technology is described. Silane-based chemical vapor d ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13e040b4977e32361614e97b0b020ce6
https://doi.org/10.1016/s0038-1101(99)00266-x
https://doi.org/10.1016/s0038-1101(99)00266-x
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2192-2201
Substantial variations in the erosion rate during low energy (5.5–10.5 keV) O+2 sputtering of polycrystalline Co thin films are demonstrated by crater depth measurements as a function of sputtering time. At normal incidence the erosion rate is cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7a08562858b76d5cd9433736b54e55d
https://doi.org/10.1116/1.580046
https://doi.org/10.1116/1.580046
Publikováno v:
Journal of Applied Physics. 76:3831-3834
Vertical expansion of a silicon surface bombarded by 10 keV 0’ ions is demonstrated using surface stylus profilometry. The surface expands gradually as the incorporated oxygen concentration increases, and a maximum is obtained when the bombardment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b87bc40e9211e574e8cdd7401271b28f
https://doi.org/10.1063/1.357386
https://doi.org/10.1063/1.357386
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 85:363-369
This paper reviews recent secondary ion mass spectrometry (SIMS) work on (i) isotope shifts in ion implantation profiles, (ii) dopant profiles in silicon and beam-induced oxidation and (iii) surface roughness and profile broadening of AlxGa1-xAs/GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::821c7b00427e44f33a4da62bd921f185
https://doi.org/10.1016/0168-583x(94)95845-9
https://doi.org/10.1016/0168-583x(94)95845-9
Autor:
B. G. Svensson, B. Mohadjeri
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 64:654-658
Implantations of 49 BF 2 + and 75 As + ions at energies between 20 and 50, and between 30 and 80 keV, respectively, have been performed in thin films of cobalt disilicide (CoSi 2 ). The resulting profiles of the 11 B + and 75 As + ions have been meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01f2c1775d206e3de6b7dd2a462017fc
https://doi.org/10.1016/0168-583x(92)95552-3
https://doi.org/10.1016/0168-583x(92)95552-3
Autor:
B. Mohadjeri, B. G. Svensson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:650-654
Isotope shifts of ion-implantation profiles for 6Li and 7Li, 10B and 11B, 16O and 18O, and 116Sn and 124Sn in silicon have been investigated at energies between 10 and 400 keV. Monte Carlo simulations as well as numerical calculations applying Boltzm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::affb71bbfe84f93d775c8ff9b9a3030f
https://doi.org/10.1016/0168-583x(91)96251-f
https://doi.org/10.1016/0168-583x(91)96251-f
Autor:
François M. d'Heurle, Juhani Keinonen, C. S. Petersson, B. Mohadjeri, Th. Eriksson, Mikael Östling, Jens Carlsson
Publikováno v:
Journal of Applied Physics. 68:2112-2120
Tungsten was deposited from a gas mixture of hydrogen and tungsten hexafluoride onto a polycrystalline silicon gate structure in a chemical vapor deposition system. During the deposition process fluorine was also deposited as an undesired impurity. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85216fbde16a9a88c29c8ac7e9f6dd39
https://doi.org/10.1063/1.346566
https://doi.org/10.1063/1.346566
Autor:
B. G. Svensson, Sören Berg, Herman Norde, U Magnusson, B Mohadjeri, J Tirén, Anders Söderbärg, Ö Grelsson
Publikováno v:
Journal of Applied Physics. 67:2148-2152
p‐n junctions formed by vacuum evaporation of silicon on crystalline silicon have been investigated. The junctions were formed by ion implantation of 49BF+2 in the evaporated silicon films. Subsequently, an isochronal heat treatment in the range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::481e42dc4e2e00708fea1701c4539167
https://doi.org/10.1063/1.345550
https://doi.org/10.1063/1.345550
Publikováno v:
Applied Physics Letters. 66:1889-1891
Almost complete gettering of Ni in (100) Si was obtained by initially implanting H to a depth of ∼0.9 μm, followed by Ni implantation close to the surface, and subsequent thermal annealing. H‐induced cavities, as evidenced by transmission electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b533aa2a26474f160ea3a8c9bbf4fdea
https://doi.org/10.1063/1.113311
https://doi.org/10.1063/1.113311
Publikováno v:
Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).
A 0.35 /spl mu/m BiCMOS technology with double poly inside spacer n-p-n transistors reaching 50 GHz Fmax and 30 V Early voltage using selective epitaxial base technology, is described. The n-p-n transistors are integrated in an analog 0.35 /spl mu/m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8070155e98663630f80bc471a497ae1e
https://doi.org/10.1109/bipol.1998.741897
https://doi.org/10.1109/bipol.1998.741897