Zobrazeno 1 - 10
of 10
pro vyhledávání: '"B I Avdochenko"'
Publikováno v:
Journal of Physics: Conference Series. 2140:012007
The paper investigates the behavior of Hall-effect sensors (HES) operating in microwave frequency range. In order to evaluate the capabilities of small radars based on HES’s, the calculation of HES output voltage dependence on microwave intensity i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37cc54bf0f76121e21166f74e16db7d3
https://doi.org/10.1088/1742-6596/2140/1/012007
https://doi.org/10.1088/1742-6596/2140/1/012007
Publikováno v:
International Journal of Engineering Research and Science. 3:26-28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63052627a04d3deb50e78a42a573a32a
https://doi.org/10.25125/engineering-journal-ijoer-sep-2017-4
https://doi.org/10.25125/engineering-journal-ijoer-sep-2017-4
Publikováno v:
Journal of Physics: Conference Series. 1488:012028
The paper focuses on the investigation of the possibility to use GaAs Hall-effect sensors (detectors) in active magnetic positioning systems. On the basis of the avalanche S-diode a pulsed magnetic field generator with the pulse front width of 0.3 ns
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2f6b93867dbfea70184f0768d7cd03d
https://doi.org/10.1088/1742-6596/1488/1/012028
https://doi.org/10.1088/1742-6596/1488/1/012028
Publikováno v:
2015 International Siberian Conference on Control and Communications (SIBCON).
This work presents results of experiments on electrical pumping of laser diode by driver based on avalanche S-diode. Nine-fold increase of pulse power of semiconductor commercial InGaN/GaN laser diode at pulse duration 15–20 ns and frequency 90 kHz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db71634b001d6b9b11b94c44b8777de2
https://doi.org/10.1109/sibcon.2015.7147103
https://doi.org/10.1109/sibcon.2015.7147103
Autor:
G F Karlova, B I Avdochenko
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 168:012026
This paper studies thin active layers of n-n i and n +-n-n i -types produced by means of silicon ion implantation into a semi-insulating GaAs substrate. The results of these structures' physical parameters investigation are presented. Based on the st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1c697dc324205159d38b3a4417e472b
https://doi.org/10.1088/1757-899x/168/1/012026
https://doi.org/10.1088/1757-899x/168/1/012026
Publikováno v:
Instruments and Experimental Techniques. 52:536-538
A high-power pulse amplifier intended for pulse excitation of microwave generators on 3A750, 3A762, 3A765, and 3A766 diodes is described. An advantage of the amplifier is that its output voltage is independent of the load resistance owing to a low ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9151ba719eefe2c87ed9898acd32468
https://doi.org/10.1134/s0020441209040101
https://doi.org/10.1134/s0020441209040101
Publikováno v:
Instruments and Experimental Techniques. 46:42-44
A picosecond dc amplifier with a multichannel frequency division is described. The basic characteristics of the amplifier are as follows: the gain is 26 dB, the pass band is 0–5.6 GHz, the nonuniformity of the amplitude–frequency response is ±1.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ec7bc9cfbb2aa9ec441c212787b68a3
https://doi.org/10.1023/a:1022579106030
https://doi.org/10.1023/a:1022579106030
Publikováno v:
1998 4th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-98 (Cat. No.98EX179).
The amplifier with the output power of 100 Wt, adjusted on any VHF TV channels is described. It consist of two 75 Wt amplifiers and a block of dividing and adding of power and ensuring the separate amplification of the image and sound signals with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecf276cde1eaae0dd85e437d8e872902
https://doi.org/10.1109/apeie.1998.768966
https://doi.org/10.1109/apeie.1998.768966
Publikováno v:
Ultra-Wideband, Short-Pulse Electromagnetics 3 ISBN: 9781441932761
In the last years the works on development picosecond pulse range are intensity developed. The great successes in high-voltage picosecond pulse generation, formation, amplification, control of parameters and registration are achieved. However the the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ea548ac43d90635eee49bde454293f3
https://doi.org/10.1007/978-1-4757-6896-1_6
https://doi.org/10.1007/978-1-4757-6896-1_6
Publikováno v:
Journal of Physics: Conference Series; 2020, Vol. 1488 Issue 1, p1-1, 1p