Zobrazeno 1 - 10
of 14
pro vyhledávání: '"B H, Ortiz"'
Publikováno v:
2008 First International Symposium on Applied Sciences on Biomedical and Communication Technologies.
Image remote access using cache strategies has been considered, in order to improve decoding times. However, wavelet coefficients used in coding are not the optimal solution for the Rate-Distortion functional optimization. Directional wavelet filters
Autor:
B H, Ortiz, M, Ailawadi, C, Colitti, M G, Muto, M, Deavers, E G, Silva, R S, Berkowitz, S C, Mok, D M, Gershenson
Publikováno v:
Cancer research. 61(19)
The role of serous borderline ovarian tumors (BOTs) in the pathogenesis of serous ovarian carcinomas is unclear. Some authors have compared mutations in serous BOTs to those in serous ovarian carcinomas, but the data on two common oncogenes, p53 and
Publikováno v:
Human reproduction (Oxford, England). 13(7)
Recent reports describe successful treatment of interstitial ectopic pregnancies using methotrexate. While the number of reported cases is increasing, no consensus exists regarding the management of this complication of pregnancy. We present the succ
Publikováno v:
Journal of Clinical Oncology. 22:5090-5090
5090 Background: Phase I trials have established the combination of pegylated liposomal doxorubicin (Doxil [D]) and gemcitabine as a tolerable regimen for patients (pts) with recurrent malignancies...
Autor:
Bagge, Niels1 (AUTHOR) psykolog@nielsbagge.dk, Hoffmann, Daniel2 (AUTHOR)
Publikováno v:
Person-Centered & Experiential Psychotherapies. Dec2023, Vol. 22 Issue 4, p444-467. 24p.
Autor:
Zaki, Ahmad, Husnah
Publikováno v:
E3S Web of Conferences; 9/20/2023, Vol. 429, p1-6, 6p
Publikováno v:
IOP Conference Series: Earth & Environmental Science; 5/19/2023, Vol. 1209 Issue 1, p1-7, 7p
Conference
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Publikováno v:
Revista Colombiana de Física. 2006, Vol. 38 Issue 4, p1359-1362. 4p.
Publikováno v:
Yang, J, Jahdi, S, Stark, B H, Ortiz-Gonzalez, J, Wu, R, Alatise, O & Mellor, P H 2022, Investigation on threshold voltage instability under sweeping and DC gate bias stressing of SiC symmetrical and asymmetrical double-trench MOSFETs . in 11th International Conference on Power Electronics, Machines and Drives (PEMD 2022) . Institution of Engineering and Technology (IET), Newcastle, UK, pp. 301-307, 11th International Conference on Power Electronics, Machines and Drives (PEMD 2022), Newcastle, United Kingdom, 21/06/22 . https://doi.org/10.1049/icp.2022.1066
In this paper, measurements on gate threshold voltage drift by sweeping the gate voltage and both with positive and negative DC gate stressing are performed on symmetrical and asymmetrical double-trench SiC MOSFETs with comparison to SiC planar MOSFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::296e2b6f40bdc55a3f40d5f111c9d7b7
https://research-information.bris.ac.uk/en/publications/584467c7-5032-44b0-8940-2a38655389ae
https://research-information.bris.ac.uk/en/publications/584467c7-5032-44b0-8940-2a38655389ae