Výsledky vyhledávání - "B Grandidier"

Akademický článek

DESORPTION OF Te CAPPING LAYER FROM ZnTe (100): AUGER SPECTROSCOPY, LOW-ENERGY ELECTRON DIFFRACTION AND SCANNING TUNNELING MICROSCOPY

Autor: K. K. Sossoe, M. M. Dzagli, A. Sylla, B. Grandidier, A. M. Mohou, T .J. Zoueu, S. Toure

Publikováno v: Journal of Fundamental and Applied Sciences, Vol 8, Iss 1, Pp 73-82 (2016)

The influence of the annealing temperature to desorb a protective Te capping layer of the zinc telluride (ZnTe (100)) surface was investigated. The surface reconstruction of the ZnTe (100) upon the removal of a Te capping layer grown by the molecular

Externí odkaz: https://doaj.org/article/dada17fadee14b108d3fa77eb5a14a98

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Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy

Autor: Nemanja Peric, Corentin Durand, Maxime Berthe, Yan Lu, Kekeli N'Konou, Roland Coratger, Isabelle Lefebvre, Philipp Ebert, Louis Biadala, Ludovic Desplanque, Xavier Wallart, B. Grandidier

Publikováno v: Applied Physics Letters
Applied Physics Letters, 2022, 121 (19), pp.192104. ⟨10.1063/5.0104807⟩
Applied physics letters 121(19), 192104-(2022). doi:10.1063/5.0104807

The knowledge of the band alignment in semiconductor heterostructures is crucial, as it governs carrier confinement with many impacts on the performances of devices. By controlling the direction of the current flow in in-plane In0.53Ga0.47As/InP hete

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::665a4c32ef39be88db58a0dcb5e9c78b
https://hal.science/hal-03846293

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Assessing the insulating properties of an ultrathin SrTiO3 shell grown around GaAs nanowires with molecular beam epitaxy

Autor: N Peric, T Dursap, J Becdelievre, M Berthe, A Addad, P Rojo Romeo, R Bachelet, G Saint-Girons, O Lancry, S Legendre, L Biadala, J Penuelas, B Grandidier

Publikováno v: Nanotechnology
Nanotechnology, 2022, 33 (37), pp.375702. ⟨10.1088/1361-6528/ac7576⟩

We have studied electronic transport in undoped GaAs/SrTiO3 core–shell nanowires standing on their Si substrate with two-tip scanning tunneling microscopy in ultrahigh vacuum. The resistance profile along the nanowires is proportional to the tip se

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbbd06bc271d9a51794280aea89c52af
https://hal.science/hal-03689625

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Akademický článek

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Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell

Autor: W Khelifi, C Coinon, M Berthe, D Troadec, G Patriarche, X Wallart, B Grandidier, L Desplanque

Publikováno v: Nanotechnology
Nanotechnology, 2023, 34 (26), pp.265704. ⟨10.1088/1361-6528/acc810⟩

The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa71f53b2bfd08fdf5db6f28f966edfb
https://doi.org/10.1088/1361-6528/acc810

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Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

Autor: H. Koussir, I. Lefebvre, M. Berthe, Y. Chernukha, J. Tranchant, B. Corraze, E. Janod, L. Cario, B. Grandidier, P. Diener

Publikováno v: Journal of Physics: Conference Series, Volume 2164
Strongly Correlated Electron Systems (SCES 2020)
Strongly Correlated Electron Systems (SCES 2020), Sep 2021, Campinas, Brazil. Journal of Physics: Conference Series, Volume 2164, 012046, 4 p., ⟨10.1088/1742-6596/2164/1/012046⟩

The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89259af082154bc7dfb47a074db6b257
https://hal.science/hal-03753819/document

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