Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

Autor: M. E. Ingebrigtsen, A. Yu. Kuznetsov, B. G. Svensson, G. Alfieri, A. Mihaila, U. Badstübner, A. Perron, L. Vines, J. B. Varley

Publikováno v: APL Materials, Vol 7, Iss 2, Pp 022510-022510-10 (2019)

Single crystalline bulk and epitaxially grown gallium oxide (β–Ga2O3) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 109 to 6 × 1014 cm−2 in order to study the impact on charge carrier concentration and electrically active

Externí odkaz: https://doaj.org/article/7da16b955d4e48619b2e21d12a54fdb6

Interaction of Radiation-Induced Self-Interstitials with Vacancy-Oxygen Related Defects VnO2 (n from 1 to 3) in Silicon

Autor: Vladimir P. Markevich, Anthony R. Peaker, L.I. Murin, B. G. Svensson, Jack Mullins, Ekaterina A. Tolkacheva, Stanislau B. Lastovskii

Publikováno v: Murin, L I, Tolkacheva, E A, Lastovskii, S B, Markevich, V P, Mullins, J, Peaker, A R & Svensson, B G 2018, ' Interaction of Radiation-Induced Self-Interstitials with Vacancy-Oxygen Related Defects VnO2 (n from 1 to 3) in Silicon ', Physica Status Solidi. A: Applications and Materials Science . https://doi.org/10.1002/pssa.201800609

Two stage electron irradiation with thermal heat‐treatments after each stage is used for vacancy‐oxygen‐related defect engineering in Czochralski‐grown silicon (Cz‐Si). The Cz‐Si samples are first irradiated at room temperature with 2.5 M

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::603f6371884edd904698f896eea2e169
http://doi.wiley.com/10.1002/pssa.201800609

Kinetics study of vacancy-oxygen-related defects in monocrystalline solar silicon

Autor: Vincent Quemener, L.I. Murin, B. G. Svensson, Edouard Monakhov, F. Herklotz, B. Raeissi

Publikováno v: physica status solidi (b). 251:2197-2200

In this work, diffusion and dissociation mechanisms related to the formation and evolution of vacancy–oxygen complexes have been studied. Czochralski-grown silicon samples have been irradiated at room temperature using fast electrons resulting in t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c0ff8e60acdf6d1b431736a400b2613
https://doi.org/10.1002/pssb.201400155

Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

Autor: Ponniah Ravindran, B. G. Svensson, Eduard Monakhov, R. Vidya, Risto M. Nieminen, Helmer Fjellvåg, Maria Ganchenkova

Publikováno v: Physical Review B. 83(4):1-12

Formation energies of various intrinsic defects and defect complexes in ZnO have been calculated using a density-functional-theory-based pseudopotential all-electron method. The various defects considered are oxygen vacancy (${\mathrm{V}}_{\mathrm{O}

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::888bc01003cc42226f9f436d73781973
http://juuli.fi/Record/0336780411

Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

Autor: J. L. Lindström, B. G. Svensson, Vladimir P. Markevich, L.I. Murin, Charalamos A. Londos

Publikováno v: Physica B: Condensed Matter. 404:4568-4571

FTIR study of the evolution of multivacancy-oxygen-related defects in the temperature range 100-350 degrees C in Czochralski-grown Si samples irradiated with different particles (10 MeV electrons and 5 MeV neutrons) has been carried out. Appearance o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba34e2b45a9dd77ee2e889d42b9d4d87
https://doi.org/10.1016/j.physb.2009.08.144