Zobrazeno 1 - 10 of 25 pro vyhledávání: '"B F, Lewis"'
1
Admissions of injection drug users to drug abuse treatment following HIV counseling and testing
Autor: J, McCusker, G, Willis, M, McDonald, B F, Lewis, S M, Sereti, Z T, Feldman
Publikováno v: Public health reports (Washington, D.C. : 1974). 109(2)
The outcomes of counseling and testing programs related to human immunodeficiency virus (HIV) infection and risk of infection among injection drug users (IDUs) are not well known or understood. A counseling and testing outcome of potential public hea
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::2a2bf802db9a5008e54b9369906ae8d4
https://pubmed.ncbi.nlm.nih.gov/8153272
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4
Time trends in high-risk injection practices in a multi-site study in Massachusetts: effects of enrollment site and residence
Autor: J, McCusker, A M, Stoddard, B A, Koblin, J, Sullivan, B F, Lewis, S M, Sereti
Publikováno v: AIDS education and prevention : official publication of the International Society for AIDS Education. 4(2)
Time trends in needle sharing and bleach use were examined among needle users enrolled at drug abuse treatment and nontreatment sites in greater Worcester, MA, from 1987 through 1989. Substantial declines in high-risk behavior were found, with differ
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::c6cf6a022acb72b9ba8f3afe374c2625
https://pubmed.ncbi.nlm.nih.gov/1322686
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5
First single lung transplant in Virginia
Autor: C G, Tribble, J A, Kern, L J, Findley, T M, Daniel, J D, Truwit, C E, Rose, B F, Lewis, I L, Kron
Publikováno v: Virginia medical quarterly : VMQ. 118(3)
Lung transplantation is now established as a clinical reality for patients with irreversible, lethal pulmonary conditions. We report the first successful application of this treatment modality in Virginia.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::4966280d73a4a723afaa6180d45e0025
https://pubmed.ncbi.nlm.nih.gov/1868109
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6
Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy
Autor: Frank J. Grunthaner, Anupam Madhukar, M.Y. Yen, R. Fernandez, B. F. Lewis, L. Eng
Publikováno v: Surface Science. 174:606-614
We report some results of cross-sectional transmission electron microscope (XTEM) studies on GaAs/InAs multiple quantum wells and superlattices grown under a variety of unusual growth conditions via molecular beam epitaxy. These growth conditions cov
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d189e7cafddc1b24cbbcc367b06f2cd5
https://doi.org/10.1016/0039-6028(86)90480-2
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7
Cleaning chemistry of InSb(100) molecular beam epitaxy substrates
Autor: R. P. Vasquez, B. F. Lewis, Frank J. Grunthaner
Publikováno v: Journal of Applied Physics. 54:1365-1368
InSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This f
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::616f015bd5f6261dfd3b4d81e00eac13
https://doi.org/10.1063/1.332158
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8
XPS Studies of Structure-Induced Radiation Effects at the Si/SiO2 Interface
Autor: Anupam Madhukar, J. Maserjian, Frank J. Grunthaner, B. F. Lewis, N. Zamini
Publikováno v: IEEE Transactions on Nuclear Science. 27:1640-1646
The interfacial structures of radiation hard and soft oxides grown by both dry and wet processes on silicon substrates are examined using high resolution x-ray photoelectron spectroscopy (XPS). Substantial differences are observed in the relative con
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::47e9d5d1957042f0ff2da99e29d391e1
https://doi.org/10.1109/tns.1980.4331082
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9
Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high‐resolution XPS
Autor: Anupam Madhukar, B. F. Lewis, R. P. Vasquez, P. J. Grunthaner, Frank J. Grunthaner, J. Maserjian
Publikováno v: Journal of Vacuum Science and Technology. 16:1443-1453
The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures hav
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::836f9e13c71a6e25c220b757e360e59c
https://doi.org/10.1116/1.570218
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10
The chemical structure of trapped charge sites formed at the Si/SiO2 interface by ionizing radiation as determined by XPS
Autor: Anupam Madhukar, J. Maserjian, Frank J. Grunthaner, B. F. Lewis
Publikováno v: Journal of Vacuum Science and Technology. 20:747-750
Device‐quality gate oxides (∠850 A) and thin thermal SiO2 (∠80 A) films grown on Si 〈100〉 substrates are irradiated with 0–20 eV electrons during in situ XPS measurements. The gate‐oxide structures have been thinned to 25–60 A using a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d62f04357c673cb771702d39c97ac970
https://doi.org/10.1116/1.571449
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