Zobrazeno 1 - 10
of 48
pro vyhledávání: '"B Danilchenko"'
Publikováno v:
Solid State Communications. 196:46-50
An impact of different doses (10–500 kGy) of γ-irradiation on electron–phonon coupling in Ge-doped CdTe (CdTe:Ge) single crystals was investigated via low-temperature ( T =5 K) photoluminescence (LTPL) and resonant Raman scattering (RRS). In the
Autor:
L. P. Shcherbak, B. Danilchenko, M. Boyko, Z. Tsybrii, V. V. Strelchuk, L. Rashkovetskyi, Iu. Nasieka
Publikováno v:
physica status solidi c. 11:1510-1514
An effect of γ-irradiation in the dose range 10-500 kGy on the defect structure of Ge-doped CdTe single crystals (CdTe:Ge) was investigated via the method of low-temperature photoluminescence. It was obtained that γ-irradiation in mentioned above d
Autor:
V. V. Strelchuk, L. Rashkovetskyi, Iu. Nasieka, B. Danilchenko, M. Boyko, L. Shcherbak, Z. Tsybrii
Publikováno v:
Journal of Luminescence. 144:112-116
An influence of different doses (10–500 kGy) γ-irradiation on the low-temperature photoluminescence (LTPL) of germanium-doped (Ge-doped) CdTe crystals was investigated. The following results were obtained: even at the lowest doses (equal to 10 kGy
Publikováno v:
physica status solidi (c). 1:2694-2697
The two components, coherent and non-coherent, of acoustical excitations accompanying heat pulse generation have been investigated in GaAs. It was shown that delta-doped layers imbedded into the GaAs crystal exhibit the peculiar property to be sensit
Publikováno v:
Journal of Physics: Condensed Matter. 15:3919-3929
The optical absorption and luminescence properties of indium-doped sodium borate glass irradiated by γ-rays and by powerful UV lasers within the impurity-related absorption band are investigated experimentally. It is demonstrated that both the laser
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 648:290-292
The low-temperature photoluminescence properties of Cd 0.9 Zn 0.1 Te thin film grown on CdTe substrate were investigated in the connection with the dependencies on different doses of γ-irradiation. It was obtained that γ-irradiation leads to the su
Publikováno v:
Semiconductor Science and Technology. 15:744-747
The influence of metastable centres on the phonon emission of highly planar-doped GaAs:Si is studied by time of flight measurements. A general decrease of the flux of ballistically propagating phonons is observed in the whole investigated range of el
Publikováno v:
Physical Review B. 61:10941-10949
Phonon-induced conductivity (PIC) in a strongly elastically scattered two-dimensional electron gas in $\ensuremath{\delta}$-doped GaAs was studied using the heat-pulse technique. The results of phonoconductivity behavior with carrier temperature as w
Publikováno v:
Journal of Low Temperature Physics. 110:1029-1042
Uniaxial stress dependence of acoustical phonon absorption in intermediately doped Ge:Sb has been studied using heat pulse technique. Abruptly decreasing LA and FTA phonon scattering in stress interval of 3−7 · 108dyn/cm2with further saturation up