Zobrazeno 1 - 10
of 23
pro vyhledávání: '"B D Sartwell"'
Autor:
J. P. G. Farr, B. D. Sartwell
Surface & Coatings Technology represents the start of a new era for the journal, not only with the change in title to Surface and Coatings Technology, but also with the significant change in the journal's scope, which is intended to place it in the f
Autor:
B. D. Sartwell, A. Matthews
Surface & Coatings Technology, Volumes 59–60 presents the proceedings of the Third International Conference on Plasma Surface Engineering, held in Garmisch-Partenkirchen, Germany, on October 26–29, 1992. This book discusses the widespread applica
Autor:
C. R. Eddy, B. D. Sartwell
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:2018-2022
An electron cyclotron resonance (ECR) microwave plasma source has been used to deposit boron nitride thin films onto silicon substrates. Borane‐ammonia (BH3⋅NH3) vapor was introduced in a controlled fashion by congruent thermal sublimation of the
Publikováno v:
Journal of Fusion Energy. 9:281-285
An effort was made to create cold fusion in thin films of palladium under low energy bombardment with high currents of deuterium ions in a vacuum chamber. Samples were monitored with a silicon surface barrier detector in order to detect any massive e
Autor:
B. D. Sartwell, R. A. Kant
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:861-867
Simultaneous Auger electron spectroscopy and ion bombardment were used to study the influence of ion bombardment on the amount of nitrogen accumulated on a Ti surface in a low‐pressure nitrogen atmosphere. The nitrogen level was measured as a funct
Autor:
B. D. Sartwell, G. P. Chambers
Publikováno v:
Surface and Interface Analysis. 15:126-134
The metal/semiconductor interface region of in situ deposited Ag thin films prepared on a Si(111) substrate has been investigated using AES sputter depth profiling in conjunction with proton-induced x-ray emission (PIXE). Interface regions have been
Publikováno v:
MRS Proceedings. 223
The dominant factors governing reactive ion etching of Si, SiO, and SiO2 thin films during bombardment with energetic Ar ions in a Cl atmosphere were investigated. Etch rates were determined in-situ by measuring weight loss as a function of ion fluen
Publikováno v:
Journal of The Electrochemical Society. 125:366-369
The Effects of Surface Modification on the Stress Corrosion Cracking Behavior of 316 Stainless Steel
Publikováno v:
CORROSION. 38:437-445
With the goal of conserving critical metals, the effects of surface modifications on the stress-corrosion cracking resistance of stainless steel has been studied. The stress corrosion crac...