Zobrazeno 1 - 10
of 285
pro vyhledávání: '"B Cvikl"'
Autor:
B. Cvikl
Publikováno v:
Synthetic Metals. 292:117246
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9af7a6e7c113846e3a0160d7527ac1ee
https://doi.org/10.1016/j.synthmet.2022.117246
https://doi.org/10.1016/j.synthmet.2022.117246
Autor:
B. Cvikl
Publikováno v:
Synthetic Metals. 284:117005
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ae77c42df735705ff8abb6abd99d1a3
https://doi.org/10.1016/j.synthmet.2021.117005
https://doi.org/10.1016/j.synthmet.2021.117005
Publikováno v:
Thin Solid Films. 646:190-198
The origin of the empirical linear dependence of Eint the electric field at the charge-injecting metal/poly(3-hexylthiophene), P3HT, interfaces on the externally applied bias, Ea, that governs its room temperature negative field charge drift mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af1ce65aa169b34e552f5b81503bb42f
https://doi.org/10.1016/j.tsf.2017.12.007
https://doi.org/10.1016/j.tsf.2017.12.007
Publikováno v:
Thin Solid Films. 616:786-792
The published (room temperature) negative hole mobility, i.e. diminishing hole mobility with an increasing electric field, E a , of three different organic semiconductors are analyzed in terms of the processes at the hole injecting interface. The cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2113a9c3e9b866634a9b8aac27c5302
https://doi.org/10.1016/j.tsf.2016.09.059
https://doi.org/10.1016/j.tsf.2016.09.059
Autor:
B. Cvikl
Publikováno v:
Thin Solid Films. 698:137863
Two different sets of published temperature dependent current-voltage N,N´-Di(1-naphthyl)-N,N´-diphenyl-(1,1´-biphenyl)-4,4´-diamine organic semiconductor data are analyzed. The general solution of Poisson equation with the imbedded charge traps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcef1e84ff6f761e1e313e7ac37d00e0
https://doi.org/10.1016/j.tsf.2020.137863
https://doi.org/10.1016/j.tsf.2020.137863
Autor:
B. Cvikl
Publikováno v:
Thin Solid Films. 542:380-387
By incorporating a non-zero electric field at the charge injecting metal/organic interface, Eint, into the Mark–Helfrich model of charge traps exponentially distributed in energy, a general expression for the current density–voltage dependence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c9fad7fb002a3070ffae0e6039bf91e
https://doi.org/10.1016/j.tsf.2013.06.026
https://doi.org/10.1016/j.tsf.2013.06.026
Publikováno v:
ZWR - Das Deutsche Zahnärzteblatt. 113:81-84
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60f4383d02a9d3290c7b15148e5e3cf1
https://doi.org/10.1055/s-2004-823091
https://doi.org/10.1055/s-2004-823091
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Vacuum. 50:385-393
The room temperature I-U characteristics of the ionized cluster beam, ICB, deposited Ag\n-Si(111) and Ag\p-Si(100) Schottky barrier junctions, for non zero Ag ions acceleration voltage Ua > 0 V, have been investigated. The effective Schottky barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a04210d93c8fdc987d32731bbe942e6c
https://doi.org/10.1016/s0042-207x(98)00070-0
https://doi.org/10.1016/s0042-207x(98)00070-0
Autor:
B. Cvikl
Publikováno v:
Molecular Physics. 88:419-436
The QNS high resolution measurements of the elastic incoherent structure factor obtained for the oriented sample of the molecule p-ethoxybenzylidene-p-n-butylphenyl with deuterated tails (d-EBBA) in the nematic and isotropic phases (M. P. Fontana and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6f50a74fa04f8180ccfc134e51e40de
https://doi.org/10.1080/00268979650026433
https://doi.org/10.1080/00268979650026433