Zobrazeno 1 - 10
of 750
pro vyhledávání: '"Böttger R"'
Autor:
Hammerath, F., Bali, R., Huebner, R., Brandt, M. R. D., Rodan, S., Potzger, K., Boettger, R., Sakuraba, Y., Buechner, B., Wurmehl, S.
We investigated the structure-property relationship of Co$_2$MnSi Heusler thin films upon the irradiation with He$^+$ ions. The variation of the crystal structure with increasing ion fluence has been probed using nuclear magnetic resonance (NMR) and
Externí odkaz:
http://arxiv.org/abs/1809.07097
Autor:
Wang, Mao, Debernardi, A., Berencén, Y., Heller, R., Xu, Chi, Yuan, Ye, Xie, Yufang, Böttger, R., Rebohle, L., Skorupa, W., Helm, M., Prucnal, S., Zhou, Shengqiang
Publikováno v:
Phys. Rev. Applied 11, 054039 (2019)
N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibriu
Externí odkaz:
http://arxiv.org/abs/1809.06055
Autor:
Wang, Mao, Berencén, Y., García-Hemme, E., Prucnal, S., Hübner, R., Yuan, Ye, Xu, Chi, Rebohle, L., Böttger, R., Heller, R., Schneider, H., Skorupa, W., Helm, M., Zhou, Shengqiang
Publikováno v:
Phys. Rev. Applied 10, 024054 (2018)
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature
Externí odkaz:
http://arxiv.org/abs/1809.00983
Autor:
Liu, F., Prucnal, S., Berencén, Y., Zhang, Z., Yuan, Y., Liu, Y., Heller, R., Boettger, R., Rebohle, L., Skorupa, W., Helm, M., Zhou, S.
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical transport me
Externí odkaz:
http://arxiv.org/abs/1707.09207
Autor:
Zhou, Shengqiang, Li, Lin, Yuan, Ye, Rushforth, A. W., Chen, Lin, Wang, Yutian, Böttger, R., Heller, R., Zhao, Jianhua, Edmonds, K. W., Campion, R. P., Gallagher, B. L., Timm, C., Helm, M.
Publikováno v:
Phys. Rev. B 94, 075205 (2016)
For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity
Externí odkaz:
http://arxiv.org/abs/1602.06790
Autor:
Goldberg, M. B., Dangendorf, V., Vartsky, D., Bar, D., Böttger, R., Brandis, M., Bromberger, B., Feldman, G., Friedman, E., Heflinger, D., Lauck, R., Löb, S., Maier-Komor, P., Mardor, I., Mor, I., Speidel, K. -H., Tittelmeier, K., Weierganz, M.
A dual-purpose ion-accelerator concept, capable of serving as radiation source in a versatile, nuclear-reaction-based cargo inspection system, is presented. The system will automatically and reliably detect small, operationally-relevant quantities of
Externí odkaz:
http://arxiv.org/abs/1001.3255
Autor:
Liu, Fang, Prucnal, S., Yuan, Ye, Heller, R., Berencén, Y., Böttger, R., Rebohle, L., Skorupa, W., Helm, M., Zhou, S.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 June 2018 424:52-55
Autor:
Švecová, B., Vařák, P., Vytykáčová, S., Nekvindová, P., Macková, A., Malinský, P., Böttger, R.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 September 2017 406 Part A:193-198
Autor:
Macková, A., Malinský, P., Jagerová, A., Sofer, Z., Klímová, K., Sedmidubský, D., Mikulics, M., Lorinčík, J., Veselá, D., Böttger, R., Akhmadaliev, S.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 September 2017 406 Part A:53-57
Autor:
Yıldırım, O., Cornelius, S., Smekhova, A., Butterling, M., Anwand, W., Wagner, A., Bähtz, C., Böttger, R., Potzger, K.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 15 December 2016 389-390:13-16