Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Böscke, T.S."'
Autor:
Müller, J., Böscke, T.S., Schröder, U., Reinicke, M., Oberbeck, L., Zhou, D., Weinreich, W., Kücher, P., Lemberger, M., Frey, L.
Publikováno v:
In Microelectronic Engineering 2009 86(7):1818-1821
Autor:
Comparotto, C., Noebels, M., Popescu, L., Edler, A., Ranzmeyer, J., Klaus, T., Mihailetchi, V.D., Harney, R., Lossen, J., Böscke, T.S., Schär, D., Nussbaumer, H., Baumann, T., Baumgartner, F.P.
29th European Photovoltaic Solar Energy Conference and Exhibition; 3248-3250
There is an increased energy yield for n-type bifacial solar modules as compared with n-type monofacial modules. However, the benefit of bifaciality depends on several
There is an increased energy yield for n-type bifacial solar modules as compared with n-type monofacial modules. However, the benefit of bifaciality depends on several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6826ac73d2311a3b420759b6f218ee0
https://hdl.handle.net/11475/13260
https://hdl.handle.net/11475/13260
Autor:
Kania, D., Böscke, T.S., Braun, M., Sadler, P., Schöllhorn, C., Dupke, M., Stichtenoth, D., Helbig, A., Carl, R., Meyer, K., Grohe, A., Lossen, J., Krokoszinski, H.-J.
28th European Photovoltaic Solar Energy Conference and Exhibition; 1383-1385
In this study a cost optimized cell concept is demonstrated that uses the advantages of bifacial light collection as well as LID-free n-type silicon wafers and which ca
In this study a cost optimized cell concept is demonstrated that uses the advantages of bifacial light collection as well as LID-free n-type silicon wafers and which ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2791e1a4bdefb39822f04fa1c5da5745
Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO2
We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin Si : HfO2. The program and erase operation of this metal-ferroelectric-insulator-silicon FET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::459c4b1037cb42f70c0976b06f89c652
https://publica.fraunhofer.de/handle/publica/228163
https://publica.fraunhofer.de/handle/publica/228163
Autor:
Müller, J., Böscke, T.S., Schröder, U., Mueller, S., Bräuhaus, D., Böttger, U., Frey, L., Mikolajick, T.
The transition metal oxides ZrO2 and HfO2 as well as their solid solution are widely researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal structure and therewith linear dielectric characteristics. For this reason,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::557eeddd4ea0dce78dd69294f1796a68
https://publica.fraunhofer.de/handle/publica/229627
https://publica.fraunhofer.de/handle/publica/229627
Autor:
Müller, J., Böscke, T.S., Bräuhaus, D., Schröder, U., Böttger, U., Sundqvist, J., Kcher, P., Mikolajick, T., Frey, L.
We report the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide. Hf0.5Zr0.5O2 thin films of 7.5 to 9.5 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::78bbf6f1d7788af33c14c8a3173c91f1
https://publica.fraunhofer.de/handle/publica/226415
https://publica.fraunhofer.de/handle/publica/226415
Autor:
Müller, J.1 mueller.johannes@hotmail.de, Böscke, T.S.2, Schröder, U.2, Reinicke, M.2, Oberbeck, L.2, Zhou, D.2, Weinreich, W.1, Kücher, P.1, Lemberger, M.3, Frey, L.3
Publikováno v:
Microelectronic Engineering. Jul2009, Vol. 86 Issue 7-9, p1818-1821. 4p.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.