Zobrazeno 1 - 10
of 346
pro vyhledávání: '"Béranger, C"'
Autor:
Bosch, D., Alba, P. Acosta, Kerdiles, S., Benevent, V., Perrot, C., Lassarre, J., Richy, J., Lacord, J., Sklenard, B., Brunet, L., Batude, P., Fenouillet-Beranger, C., Lattard, D., Colinge, J. P., Balestra, F., Andrieu, F.
To take fully advantage of Junctionless transistor (JLT) low-cost and low-temperature features we investigate a 475 degC process to create onto a wafer a thin poly-Si layer on insulator. We fabricated a 13nm doped (Phosphorous, 1E19 at/cm3) poly-sili
Externí odkaz:
http://arxiv.org/abs/2011.15061
Autor:
Bosch, D., Garros, X., Makosiej, A., Ciampolini, L., Weber, O., Lacord, J., Cluzel, J., Giraud, B., Berthelon, R., Cibrario, G., Brunet, L., Batude, P., Fenouillet-Béranger, C., Lattard, D., Colinge, J.P., Balestra, F., Andrieu, F.
Publikováno v:
In Solid State Electronics June 2020 168
Autor:
Rodriguez, Ph., Deprat, F., Sésé, C., Zhiou, S., Favier, S., Fenouillet-Béranger, C., Luo, T., Mangelinck, D., Gergaud, P., Nemouchi, F.
Publikováno v:
In Microelectronic Engineering 15 November 2018 200:19-25
Autor:
Diaz Llorente, C., Le Royer, C., Batude, P., Fenouillet-Beranger, C., Martinie, S., Lu, C.-M.V., Allain, F., Colinge, J.-P., Cristoloveanu, S., Ghibaudo, G., Vinet, M.
Publikováno v:
In Solid State Electronics June 2018 144:78-85
Autor:
Azzaz, M., Benoist, A., Vianello, E., Garbin, D., Jalaguier, E., Cagli, C., Charpin, C., Bernasconi, S., Jeannot, S., Dewolf, T., Audoit, G., Guedj, C., Denorme, S., Candelier, P., Fenouillet-Beranger, C., Perniola, L.
Publikováno v:
In Solid State Electronics November 2016 125:182-188
Autor:
Fenouillet-Beranger, C., Previtali, B., Batude, P., Nemouchi, F., Cassé, M., Garros, X., Tosti, L., Rambal, N., Lafond, D., Dansas, H., Pasini, L., Brunet, L., Deprat, F., Grégoire, M., Mellier, M., Vinet, M.
Publikováno v:
In Solid State Electronics November 2015 113:2-8
Autor:
Fenouillet-Beranger, C., Perreau, P., Benoist, T., Richier, C., Haendler, S., Pradelle, J., Bustos, J., Brun, P., Tosti, L., Weber, O., Andrieu, F., Orlando, B., Pellissier-Tanon, D., Abbate, F., Richard, C., Beneyton, R., Gregoire, M., Ducote, J., Gouraud, P., Margain, A., Borowiak, C., Bianchini, R., Planes, N., Gourvest, E., Bourdelle, K.K., Nguyen, B.Y., Poiroux, T., Skotnicki, T., Faynot, O., Boeuf, F.
Publikováno v:
In Solid State Electronics October 2013 88:15-20
Autor:
Fenouillet-Beranger, C., Perreau, P., Boulenc, P., Tosti, L., Barnola, S., Andrieu, F., Weber, O., Beneyton, R., Perrot, C., de Buttet, C., Abbate, F., Campidelli, Y., Pinzelli, L., Gouraud, P., Margain, A., Peru, S., Bourdelle, K.K., Nguyen, B.Y., Boedt, F., Poiroux, T., Faynot, O., Skotnicki, T., Boeuf, F.
Publikováno v:
In Solid State Electronics August 2012 74:32-37
Autor:
Monfray, S., Fenouillet-Beranger, C., Bidal, G., Boeuf, F., Denorme, S., Huguenin, J.L., Samson, M.P., Loubet, N., Hartmann, J.M., Campidelli, Y., Destefanis, V., Arvet, C., Benotmane, K., Clement, L., Faynot, O., Skotnicki, T.
Publikováno v:
In Solid State Electronics February 2010 54(2):90-96
Publikováno v:
In Solid State Electronics February 2010 54(2):123-130