Zobrazeno 1 - 10
of 161
pro vyhledávání: '"B, Theys"'
Autor:
Arnaud Etcheberry, Jackie Vigneron, François Jomard, Damien Aureau, B. Theys, Anais Loubat, Mathieu Frégnaux, Patrick Chapon, Solène Béchu, Sofia Gaiaschi, Muriel Bouttemy, Jocelyne Marciano
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
To improve the efficiencies of Cu(In,Ga)Se 2 solar cells, a perfect knowledge of the absorber composition is an absolute necessity. In order to, we performed, either in-depth or at the surface, a coupling of cross-characterization methods including a
Autor:
Frédérique Donsanti, Enrique Leite, Marie Jubault, Torben Klinkert, Fabien Mollica, B. Theys, Daniel Lincot
Publikováno v:
physica status solidi (a). 213:2425-2430
Devices based on a metal-semiconductor contact are potential candidates for the fabrication of photovoltaic cells as long as the corresponding junctions exhibit good rectifying properties and a low contact resistance. This article presents a detailed
Autor:
Damien Coutancier, Richard Garuz, T. Sidali, B. Theys, Elisabeth Chassaing, Adrien Bou, Pierre-Yves Thoulon, Daniel Lincot, Damien Barakel
Publikováno v:
EPJ Photovoltaics, Vol 9, p 2 (2018)
In this paper, a new way of preparing semi-transparent solar cells using Cu(In1−xGax)Se2 (CIGS) chalcopyrite semiconductors as absorbers for BIPV applications is presented. The key to the elaboration process consists in the co-electrodeposition of
Publikováno v:
The Journal of chemical physics. 145(15)
Being at the origin of an ohmic contact, the MoSe
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Autor:
François Jomard, B. Theys
Publikováno v:
Journal of Applied Physics. 93:4590-4593
Hydrogenated (deuterated) C-doped GaAs and Zn-doped InP layers have been exposed to a deuterium (hydrogen) plasma. Diffusion profiles have been measured by secondary ion mass spectroscopy and compared to those obtained after exposure of as-grown (wit
Publikováno v:
Diamond and Related Materials. 11:332-337
Point contact methods using metallic needles are widely applied for electrical measurements on the diamond semiconductor surfaces because of the difficulties of alloyed ohmic contact preparation. Contradictions and discussions in the literature conce
Publikováno v:
Semiconductor Science and Technology. 16:L53-L56
Metalorganic-vapour-phase-epitaxy-grown GaN layers have been exposed to a deuterium radio-frequency plasma. It is shown that in a certain plasma configuration, deuterium diffuses significantly inside the samples as long as they are Mg doped. But, on
Autor:
François Jomard, B. Theys, Dominique Tromson, Philippe Bergonzo, Christine Mer, Dominique Ballutaud
Publikováno v:
Diamond and Related Materials. 10:405-410
Diffusion profiles and effusion experiments performed on post-hydrogenated (deuterated) CVD diamond layers (grain size 2 and 0.2 μm) are reported in order to study the configurations and stability of hydrogen bonding in polycrystalline undoped CVD d
Autor:
Dominique Ballutaud, Alain Deneuville, J. Chevallier, Etienne Gheeraert, François Jomard, B. Theys, Etienne Bustarret, Alain Lusson, Mathieu Bernard
Publikováno v:
Diamond and Related Materials. 10:399-404
Hydrogen-acceptor interactions are investigated in boron-doped diamond through deuterium diffusion experiments followed by SIMS measurements and through infrared absorption spectroscopy. From deuterium diffusion, we show that BD interactions can b