Zobrazeno 1 - 10
of 424
pro vyhledávání: '"B, Suchanek"'
Publikováno v:
Acta Physica Polonica A. 92:1001-1004
Electrical transport and ESR studies were performed on the state-of-the-art GaN 1ayers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2 x 10 17 cm-1 and mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::222d52f0f1b2316e9092ca448004936c
https://doi.org/10.12693/aphyspola.92.1001
https://doi.org/10.12693/aphyspola.92.1001
Autor:
L. Shaginyan, Andrzej Wysmołek, B. Suchanek, Robert Dwilinski, Maria Kaminska, A. Żubka, W. Janik, S. Kwiatkowski
Publikováno v:
Acta Physica Polonica A. 88:1058-1062
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::950d05736f42154ae6e2edde2b984271
https://doi.org/10.12693/aphyspola.88.1058
https://doi.org/10.12693/aphyspola.88.1058
Publikováno v:
Acta Physica Polonica A. 87:321-324
6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8329f98ba627991dc987a934f4d3714
https://doi.org/10.12693/aphyspola.87.321
https://doi.org/10.12693/aphyspola.87.321
Autor:
Li, Yonghui1,2,3 (AUTHOR) liyonghui0705@163.com, Liu, Qing1,2 (AUTHOR) liuqinggc065@126.com, Zhang, Xiaoming3 (AUTHOR), Mao, Benyong4 (AUTHOR) maoby65@sohu.com, Yang, Guohui4 (AUTHOR) yanggh727@sina.com, Shi, Fuming5 (AUTHOR) shif_m@126.com, Bi, Jingui1 (AUTHOR) bijingui2022@163.com, Ma, Zhibin1 (AUTHOR) m18288957220@163.com, Tang, Guowen3 (AUTHOR) guowen03@163.com
Publikováno v:
Insects (2075-4450). Sep2024, Vol. 15 Issue 9, p671. 20p.
Autor:
Alkaron, Wasan1,2,3 (AUTHOR) alaa.almansoori@ek.hun-ren.hu, Almansoori, Alaa1,3 (AUTHOR) balazsi.katalin@ek.hun-ren.hu, Balázsi, Katalin1 (AUTHOR), Balázsi, Csaba1 (AUTHOR) wasan.alkaron@ek.hun-ren.hu
Publikováno v:
Materials (1996-1944). Aug2024, Vol. 17 Issue 16, p4117. 22p.
Autor:
Kowalczyk, Alicja1 (AUTHOR) alicja.kowalczyk@upwr.edu.pl, Kordan, Władysław2 (AUTHOR)
Publikováno v:
PLoS ONE. 7/3/2024, Vol. 19 Issue 7, p1-12. 12p.
Publikováno v:
Cast Metals. 3:157-162
A presentation is made of the influence of modification, using strontium and antimony, in changing the properties of cast aluminium alloys used in the production of automobile components. Research ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f8b830f5983743531876cfa0b74820
https://doi.org/10.1080/09534962.1990.11819035
https://doi.org/10.1080/09534962.1990.11819035
Autor:
Jacek M. Baranowski, A. M. Witowski, B. Suchanek, Gerard Martinez, K. Pakua, Roman Stepniewski, P. Wyder, Marek Potemski, M. L. Sadowski
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 3
Far infrared magnetooptical investigations of shallow donors in epitaxial MOCVD GaN layers show two types of shallow donors. In relaxed layers, a donor with an ionization energy of 35 meV was found. In strained, undoped and Si doped samples, a donor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e261067a578050a9607d1423b7b1043
https://doi.org/10.1557/s1092578300001058
https://doi.org/10.1557/s1092578300001058
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 3
Growth of GaN/Al2O3 layers by MOVPE has been investigated. Precise optimization of the growth parameters results in films with extremely high electron mobility: 900 cm2/Vs at 300K and 4000 cm2/Vs at 77K. The influence of the growth parameters on film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cd2a7b74e1010c09ddfec5247f5e736
https://doi.org/10.1557/s1092578300000958
https://doi.org/10.1557/s1092578300000958
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 3
Investigations of luminescence and ESR of silicon doped GaN layers are presented. The room temperature electron concentration in the investigated layers ranged from 1.7×1017 cm−3to 7×1018 cm−3. The layer with the highest electron concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::212b25786635ba871a7a824cebf308d1
https://doi.org/10.1557/s109257830000106x
https://doi.org/10.1557/s109257830000106x