Zobrazeno 1 - 10
of 35
pro vyhledávání: '"B, Lebouvier"'
Publikováno v:
physica status solidi (b). 220:811-819
The empirical potentials used for defect simulation in silicon are fitted on elastic or phonon properties. Usually they are not able to take into account all the distortions present in a defected material. On the basis of the potential proposed by Va
Publikováno v:
Computational Materials Science. 10:334-338
Two atomic structures A and B of the Σ = 11〈0 1 1〉 grain boundary were observed in silicon and germanium. We have performed a complete study of the stability of these two grain boundaries using some empirical potentials and also the semiempirica
Publikováno v:
Solid State Phenomena. :99-104
Publikováno v:
Materials Science Forum. :105-108
Autor:
B. Lebouvier, Marc Hou, E. Paumier, Adrian P. Sutton, A. Hairie, N. Ralantoson, O.B.M. Hardouin Duparc
Publikováno v:
Materials Science Forum. :249-252
Publikováno v:
Materials Science Forum. :277-280
Publikováno v:
physica status solidi (b). 191:267-281
The atomic structure of the (10 1 2) twin boundary in zinc is investigated theoretically by atomistic calculations and experimentally by high resolution electron microscopy. For computer simulations, the atomic interactions are described by a many-bo
Publikováno v:
Solid State Phenomena. :85-90
Publikováno v:
Human reproduction (Oxford, England). 13(1O)
The cytomorphometric characteristics of superficial vaginal cells were analyzed in three groups (15 women each) subjected to different types of hormonal concentrations: women in a normal regulatory cycle combined oral contraceptive (OC) users and wom
Autor:
B. Lebouvier, Adrian P. Sutton, F. Hairie, N. Ralantoson, A. Hairie, E. Paumier, Gerard Nouet
Publikováno v:
Interface Science. 2
A critical assessment is given of the quasi-harmonic approximation, and various approximations to the quasi-harmonic approximation, with regard to predicting the free energy and atomic structure of grain boundaries in silicon at elevated temperatures