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pro vyhledávání: '"B, Heying"'
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Autor:
E-W, Scheidt, A, Fischer, O, Wybranski, G, Eickerling, W, Scherer, M, Baenitz, F, Mayr, B, Heying, R, Pöttgen
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 29(31)
Polycrystalline [Formula: see text] [Formula: see text] [Formula: see text] samples were synthesized by arc-melting and subsequent annealing at 970 K. Specific heat, electrical resistivity and magnetic susceptibility measurements are performed over a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::26513e01f98e16df7c6767350e185ea1
https://pubmed.ncbi.nlm.nih.gov/28598335
https://pubmed.ncbi.nlm.nih.gov/28598335
Autor:
Michael Baenitz, Wolfgang Scherer, Ernst-Wilhelm Scheidt, O. Wybranski, Georg Eickerling, Andreas Fischer, Franz Mayr, Rainer Pöttgen, B. Heying
Polycrystalline [Formula: see text] [Formula: see text] [Formula: see text] samples were synthesized by arc-melting and subsequent annealing at 970 K. Specific heat, electrical resistivity and magnetic susceptibility measurements are performed over a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b3d7909b154baead1d855ff77255d96
https://opus.bibliothek.uni-augsburg.de/opus4/files/47891/47891.pdf
https://opus.bibliothek.uni-augsburg.de/opus4/files/47891/47891.pdf
Autor:
W.-B. Luo, B. Heying, Yaochung Chen, I.P. Smorchkova, Mike Wojtowicz, W. Sutton, William R. Deal, D.M. Yamauchi, M. Siddiqui, Shih-En Shih
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 57:3270-3277
In this paper, we present three ultra wide bandwidth low-noise amplifiers (LNAs) using dual-gate AlGaN/GaN HEMT devices. The single-stage, resistive feedback amplifiers target two different frequency bands: two LNAs operate in 0.3-4 GHz and one LNA i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::635e65e7ef20db4fcfe4ef066a2507ab
https://doi.org/10.1109/tmtt.2009.2034416
https://doi.org/10.1109/tmtt.2009.2034416
Autor:
I. P. Smorchkova, B. Heying, M. Wojtowicz, Goorsky, P. Feichtinger, T.R. Block, R. Sandhu, Benjamin Poust
Publikováno v:
Materials Science Forum. :1601-1604
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d769583a05de4d4fc0fe1168f81719
https://doi.org/10.4028/www.scientific.net/msf.457-460.1601
https://doi.org/10.4028/www.scientific.net/msf.457-460.1601
Publikováno v:
Materials Science Forum. :1605-1608
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f27c9797a30d481987044987b4292690
https://doi.org/10.4028/www.scientific.net/msf.457-460.1605
https://doi.org/10.4028/www.scientific.net/msf.457-460.1605
Publikováno v:
Contributions to Mineralogy and Petrology. 145:119-129
A series of high structural state plagioclases (Ab–An) was crystallized from glasses. By exchanging Na for K in KCl melts, metastable K-plagioclases (Or–An) were prepared which possess the same structural state as the starting plagioclases. Both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::296cc55c3ffecb71b34c705943104b48
https://doi.org/10.1007/s00410-002-0436-8
https://doi.org/10.1007/s00410-002-0436-8
Autor:
Christiane Poblenz, B. Heying, James S. Speck, Umesh K. Mishra, E. Haus, Tom Mates, Paul T. Fini, I.P. Smorchkova
Publikováno v:
Journal of Crystal Growth. 246:55-63
Mg-doped GaN layers were grown by plasma-assisted molecular beam epitaxy under a range of conditions. The growth temperatures and III/V ratio were altered and the resultant films were analyzed using atomic force microscopy, Hall effect measurements,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05c708d0b5359a538043b14a547ac60c
https://doi.org/10.1016/s0022-0248(02)01704-9
https://doi.org/10.1016/s0022-0248(02)01704-9
Autor:
James S. Speck, B. Heying, Edward A. Preble, Joelson André de Freitas, Evan R. Glaser, A.M. Roskowski, W. E. Carlos, Robert F. Davis
Publikováno v:
Proceedings of the IEEE. 90:993-1005
Metal-organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are the principal techniques for the growth and n-type (Si) and p-type (Mg) doping of III-nitride thin films on sapphire and silicon carbide substrates as well as previously g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6782ec2c7687359a9ae3d9cf9f302922
https://doi.org/10.1109/jproc.2002.1021564
https://doi.org/10.1109/jproc.2002.1021564
Publikováno v:
Journal of Crystal Growth. 234:623-630
The morphological evolution of InGaN laser diodes on laterally overgrown GaN on sapphire was investigated to understand the effect of threading dislocations (TDs) on the morphology and subsequent device performance. Screw-component TDs were found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fe58c3a42157e339e139a5d023ef06c
https://doi.org/10.1016/s0022-0248(01)01745-6
https://doi.org/10.1016/s0022-0248(01)01745-6