Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Azrif Manut"'
Autor:
Muhammad Syamil Muttaqin Zulkifli, Rozina Abdul Rani, Azrif Manut, Maizatul Zolkapli, Muhammad Haziq Ilias, Norhazlin Khairudin, Katrul Nadia Basri, Ahmad Sabirin Zoolfakar
Publikováno v:
2022 IEEE International Conference on Semiconductor Electronics (ICSE).
Autor:
Azrif Manut, Azlina Mohd Zain, Norhazlin Khairudin, Rozina Abdul Rani, Dharma Aryani, Norhafizah Burham, Ahmad Sabirin Zoolfakar, Muhammad Afiq Ajwad Romli, Muhammad Haziq Ilias
Publikováno v:
2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
This research demonstrates the effect of the use of different Aurum (Au) interdigitated electrode (IDE) spacing on the performance of electrochemically reduced graphene oxide (ERGO) humidity sensor via electrodeposition method. Electrochemically depo
Publikováno v:
2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
In this paper, a thin film were deposited on Interdigitated Electrodes (IDE) by using Electrochemical Deposition (ECD) method. Thin film consist of zinc nitrate (Zn(NO 3 ) 2 ) or zinc acetate (ZnC 4 H 6 O 4 ) precursors has been used in this work. Hu
Autor:
Harnani Hassan, Muhammad Asraf Hairuddin, Nurul Amira binti Anang Othman, Azrif Manut, Maizatul Zolkapli, Noor Ezan Abdullah, Ahmad Sabirin Zoolfakar
Publikováno v:
2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
The solar photovoltaic (PV) system has become the key attraction for the generation of clean, renewable electricity. Nevertheless, performance varies due to different parameters and environmental factors. Therefore, a remote and real- performance is
Autor:
David Vigar, Asen Asenov, Rui Gao, Mehzabeen Mehedi, Weidong Zhang, Ben Kaczer, Zhigang Ji, Azrif Manut, Jian Fu Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 66:1482-1488
Low-power circuits are important for many applications, such as Internet of Things. Device variations and fluctuations are challenging their design. Random telegraph noise (RTN) is an important source of fluctuation. To verify a design by simulation,
Autor:
Azlina Mohd Zain, Norhafizah Burham, Azrif Manut, Nazrah Omar, Ahmad Sabirin Zoolfakar, Maizatul Zolkapli, Norhazlin Khairudin, Rozina Abdul Rani, Muhammad Hilmi Mohd Najmi
Publikováno v:
2020 IEEE International Conference on Semiconductor Electronics (ICSE).
This work presents the effect of nitrogen (N 2 ) doped in aqueous solution of Graphene Oxide (GO) deposited onto the surface of the Aurum (Au) 200um spacing Interdigitated Electrode (IDE) via electrochemical deposition (ECD) method. Electrochemical d
Autor:
Azrif Manut, Nur Suhada Ab Ghani, Maizatul Zolkapli, Mohamad Hafiz Mamat, Ahmad Sabirin Zoolfakar
Publikováno v:
2020 IEEE International Conference on Semiconductor Electronics (ICSE).
A resistive-type humidity sensor based on Titanium Dioxide nanotubes was prepared. Anodization process is used to synthesize the Titanium Dioxide (TiO 2 ) thin film nanostructures. Titanium was used as an anode, while platinum as the cathode in an el
Autor:
Azrif Manut, Maizatul Zolkapli, Nor Farisha Idayu Binti Abdullah, Ahmad Sabirin Zoolfakar, Rozina Abdul Rani
Publikováno v:
2020 IEEE International Conference on Semiconductor Electronics (ICSE).
In this study, a new technique was used in order to detect honeybee’s authenticity. Pure honey and adulterated honey were characterized by using X-Ray Diffraction (XRD). To prepare the adulterated honey, sugar adulterants (glucose) was diluted into
Autor:
Jacopo Franco, Azrif Manut, Sharifah Wan Muhamad Hatta, Dimitri Linten, Rui Gao, Jian Fu Zhang, Guido Groeseneken, Weidong Zhang, Ben Kaczer, Zhigang Ji
Publikováno v:
IEEE Transactions on Electron Devices. 64:4011-4017
Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely observed and known to play an important role in device’s lifetime. However, its characterization and modeling in nanoscaled devices is a challenge due to their st
Autor:
Jigang Ma, Azrif Manut, Rui Gao, Dimitri Linten, Jian Fu Zhang, David Vigar, M. Duan, Jacopo Franco, Guido Groeseneken, Sharifah Wan Muhamad Hatta, Weidong Zhang, Ben Kaczer, Zhigang Ji
Publikováno v:
IEEE Transactions on Electron Devices. 64:1467-1473
To predict the negative bias temperature instability (NBTI) towards the end of pMOSFETs’ 10 years lifetime, power-law based extrapolation is the industrial standard method. The prediction accuracy crucially depends on the accuracy of time exponents