Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Azrif B. Manut"'
Autor:
Azrif B. Manut, Jian Fu Zhang, Meng Duan, Zhigang Ji, Wei Dong Zhang, Ben Kaczer, Tom Schram, Naoto Horiguchi, Guido Groeseneken
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 15-21 (2016)
For nanometer MOSFETs, charging and discharging a single trap induces random telegraph noise (RTN). When there are more than a few traps, RTN signal becomes complex and appears as within a device fluctuation (WDF). RTN/WDF causes jitters in switch ti
Externí odkaz:
https://doaj.org/article/f776b6bf276f4192bd9ccd77104c6dbf
