Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Azat Latypov"'
Autor:
Werner Gillijns, Jae-Uk Lee, Ryan Ryoung han Kim, Chih-I Wei, Xima Zhang, Azat Latypov, Germain Fenger, John Sturtevant
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1b4b09fe6a0ae94a8ad5b139fb1242f
https://doi.org/10.1117/12.2658260
https://doi.org/10.1117/12.2658260
Autor:
Chih-I Wei, Azat Latypov, Shuling Wang, Satya Sriram, Prakash Deep, Yunfei Deng, Ethan Maguire, Shumay Shang, Germain Fenger, Werner Gillijns
Publikováno v:
Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::428c481580faf7cc52d757a967ea17ed
https://doi.org/10.1117/12.2640532
https://doi.org/10.1117/12.2640532
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
Photon absorption statistics combined with a simple model of resist chemistry triggered by each absorbed photon leads to a family of stochastic models with a Gaussian Random Field deprotection. Two important aspects of such models are discussed. Firs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf8f567c188c3f84314a0dea602a9496
https://doi.org/10.1117/12.2583792
https://doi.org/10.1117/12.2583792
Publikováno v:
Japanese Journal of Applied Physics. 61:SD0806
Gaussian random field (GRF) models for EUV lithography (EUVL) exposure and resist process address the randomness of the EUVL process outcomes manifested as line edge roughness, line width roughness or catastrophic failures of pinching, bridging or mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e355cef8f14a5446065715d0218426
https://doi.org/10.35848/1347-4065/ac54f5
https://doi.org/10.35848/1347-4065/ac54f5
Autor:
Chih-I Wei, John L. Sturtevant, Azat Latypov, Gurdaman Khaira, Peter De Bisschop, Germain Fenger
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI
The methods to calculate the probability of success/failure of EUV lithography (EUVL) processes are presented. The success of an EUVL process is defined as a complete removal of the resist material within one set of designated volumes and a complete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::943e2f06db9072d223aa370911008e9c
https://doi.org/10.1117/12.2551965
https://doi.org/10.1117/12.2551965
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
Edge position variation in EUV patterns is significantly affected by stochastic phenomena that occur during the EUV exposure and the chemical processes in photoresist. Hence, it is important to understand and quantify the contribution of each of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a52f5eeb12472eb0408c51b9ed9ef79
https://doi.org/10.1117/12.2297492
https://doi.org/10.1117/12.2297492
Publikováno v:
SPIE Proceedings.
The effects of thermal fluctuations in graphoepitaxy DSA are studied using simulations based on the self-consistent field theory (SCFT) model. The known method of using an external potential field to displace or deform the DSA cylinder is employed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a92698fee801a808e263d1ae76634b
https://doi.org/10.1117/12.2258709
https://doi.org/10.1117/12.2258709
Publikováno v:
SPIE Proceedings.
Minimization and control of line-edge roughness (LER) and contact-edge roughness (CER) is one of the current challenges limiting EUV line-space and contact hole printability. One significant contributor to feature roughness and CD variability in EUV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b65b798bd11d1ff7890a7fabe1d1b6f
https://doi.org/10.1117/12.2258693
https://doi.org/10.1117/12.2258693
Autor:
Harry J. Levinson, Andy Brendler, Todd Bailey, Anindarupa Chunder, Azat Latypov, John J. Biafore
Publikováno v:
SPIE Proceedings.
The optimization problem of reducing EUV line edge roughness (LER) of a given feature, subject to the tolerance constraints on a CD of this feature at nominal EUV process conditions and several off-nominal conditions, is formulated. A stochastic rigo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ad2e4053e976ca4ec1aab75a2b9bab9
https://doi.org/10.1117/12.2258707
https://doi.org/10.1117/12.2258707
Publikováno v:
ACM Great Lakes Symposium on VLSI
Unidirectional design has attracted lots of attention with the scaling down of technology nodes. However, due to the limitation of traditional lithography, printing the randomly distributed dense cuts becomes a big challenge for highly scaled unidire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1633c4d086c2d6f477a65a41ebe7016c
https://doi.org/10.1145/2742060.2742114
https://doi.org/10.1145/2742060.2742114