Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Azat Abdullaev"'
Autor:
Azat Abdullaev, Kairolla Sekerbayev, Alexander Azarov, Vishnukanthan Venkatachalapathy, Vinay S. Chauhan, Zhandos Utegulov, Andrej Kuznetsov
Publikováno v:
APL Materials, Vol 12, Iss 8, Pp 081108-081108-7 (2024)
Recently discovered double gamma/beta (γ/β) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across interfaces without changing the chemical compositions of materials, in contras
Externí odkaz:
https://doaj.org/article/f8683bc0241c4ac99dfb0ee444403e1b
Autor:
Vinay S. Chauhan, Azat Abdullaev, Zhandos Utegulov, Jacques O’Connell, Vladimir Skuratov, Marat Khafizov
Publikováno v:
AIP Advances, Vol 10, Iss 1, Pp 015304-015304-6 (2020)
Anisotropic thermal transport behavior was investigated in a single crystal sapphire patterned by vertically aligned few-nanometer diameter and several micrometer long cylindrical ion tracks. These ion tracks were introduced by exposing the sapphire
Externí odkaz:
https://doaj.org/article/a44d2ac39bbf41f6810b2d50d5065500
Autor:
Talgat A. Yakupov, Almagul Mentbayeva, Zhandos N. Utegulov, Zhumabay Bakenov, Azat Abdullaev, Aliya Mukanova
Publikováno v:
Materials Today: Proceedings. 25:88-92
Silicon is the heart of modern electronics and due to it is high theoretical storage capacity it also attracted much attention as a possible anode material for the next generation Li-ion batteries. Heat conduction is one of the major properties in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7272bf88a1070a9ca3cd968a8a1d08a9
https://doi.org/10.1016/j.matpr.2019.11.333
https://doi.org/10.1016/j.matpr.2019.11.333
Autor:
Azat Abdullaev, Ainur Koshkinbayeva, Vinay Chauhan, Zhangatay Nurekeyev, Jacques O'Connell, Arno Janse van Vuuren, Vladimir Skuratov, Marat Khafizov, Zhandos N. Utegulov
Publikováno v:
Journal of Nuclear Materials. 561:153563
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67de84a159be9d3052fb9427fecd0046
https://doi.org/10.1016/j.jnucmat.2022.153563
https://doi.org/10.1016/j.jnucmat.2022.153563
Autor:
Azat Abdullaev, J.H. O'Connell, Zhandos N. Utegulov, V.A. Skuratov, Baurzhan Muminov, Marat Khafizov, Vinay S. Chauhan
Publikováno v:
Journal of Applied Physics. 127:035108
We studied the degradation of thermal conductivity in single crystal sapphire (α-Al2O3) irradiated by 167 MeV Xe swift heavy ions (SHIs) over the multiple fluences in the range of 1012–1014 ions/cm2. Thermal conductivity was measured primarily in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::992cc21132258d04d95b7459acf0539f
https://doi.org/10.1063/1.5126413
https://doi.org/10.1063/1.5126413
Autor:
Zhandos N. Utegulov, Vinay S. Chauhan, Azat Abdullaev, Vladimir A. Skuratov, J.H. O'Connell, Marat Khafizov
Publikováno v:
AIP Advances, Vol 10, Iss 1, Pp 015304-015304-6 (2020)
Anisotropic thermal transport behavior was investigated in a single crystal sapphire patterned by vertically aligned few-nanometer diameter and several micrometer long cylindrical ion tracks. These ion tracks were introduced by exposing the sapphire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cf62baa73413d65890912ef43d1d4c8
https://doaj.org/article/a44d2ac39bbf41f6810b2d50d5065500
https://doaj.org/article/a44d2ac39bbf41f6810b2d50d5065500
Autor:
Michael J. Wallace, Azat Abdullaev, Weihua Guo, Frank Bello, Marta Nawrocka, Qiaoyin Lu, John F. Donegan
Publikováno v:
IEEE Journal of Quantum Electronics. 51:1-5
We analyze the spectral and spatial characteristics of a partially slotted, ridge-waveguide semiconductor laser utilized for single mode operation and suitable for integration with additional optical devices. In particular, we extract the photon dist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60cca5dcddb024f3dbd648501304eae7
https://doi.org/10.1109/jqe.2015.2485219
https://doi.org/10.1109/jqe.2015.2485219
Autor:
Azat Abdullaev, Weihua Guo, Qiaoyin Lu, Marta Nawrocka, James O'Callaghan, John F. Donegan, Frank Bello
Publikováno v:
IEEE Photonics Technology Letters. 26:2225-2228
A single-mode laser platform has been developed with a simple and high-yield fabrication based on etched slots. We present linewidth measurements on such lasers, which are fabricated without any regrowth steps. The group of slots placed on one side o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be7e5318af1d8fb5b7a81a232debedb3
https://doi.org/10.1109/lpt.2014.2350772
https://doi.org/10.1109/lpt.2014.2350772
Publikováno v:
IEEE Journal of Quantum Electronics. 50:1-5
We present an in-depth analysis of the linewidth of a partially slotted semiconductor laser utilized for single mode operation exhibiting integrability with other photonic devices. Theoretically, the reflection coefficients are calculated via the sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4d67a7a3244888962ab0b3b00e2e71a
https://doi.org/10.1109/jqe.2014.2344043
https://doi.org/10.1109/jqe.2014.2344043
Publikováno v:
IEEE Photonics Technology Letters. 25:564-567
Performance of single mode lasers based on slots integrated with a semiconductor optical amplifier (SOA) is presented. To improve the laser performance, the anti-reflection and high-reflection coating films are applied to the front and back facets of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0495a9eb033dcbd061550812072033e3
https://doi.org/10.1109/lpt.2013.2245645
https://doi.org/10.1109/lpt.2013.2245645