Zobrazeno 1 - 10
of 161
pro vyhledávání: '"Azadmand A"'
Autor:
Ali Talaei, Ali Akbari, Mahdiyeh Sarraf-Razavi, Shabnam Niroumand, Dina Ganji, Maryam Aghasizadeh, Ali Azadmand, Maryam Tayyebi-Meybodi, Sanam Tayyebi-Meybodi
Publikováno v:
Journal of Affective Disorders Reports, Vol 17, Iss , Pp 100818- (2024)
Background: Bipolar disorder is classified as one of the most debilitating mental diseases. Although patients receive medical treatment, cognitive deficits remain in the euthymic phase in many patients. It is hypothesized that brain electrical stimul
Externí odkaz:
https://doaj.org/article/24cdc14bf6a54e8ea215f65a6056dc50
Autor:
Talaei, Ali, Akbari, Ali, Sarraf-Razavi, Mahdiyeh, Niroumand, Shabnam, Ganji, Dina, Aghasizadeh, Maryam, Azadmand, Ali, Tayyebi-Meybodi, Maryam, Tayyebi-Meybodi, Sanam
Publikováno v:
In Journal of Affective Disorders Reports July 2024 17
Autor:
Auzelle, T., Azadmand, M., Flissikowski, T., Ramsteiner, M., Morgenroth, K., Stemmler, C., Fernández-Garrido, S., Sanguinetti, S., Grahn, H. T., Geelhaar, L., Brandt, O.
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at tempe
Externí odkaz:
http://arxiv.org/abs/2001.06387
Autor:
Azadmand, Mani, Auzelle, Tomas, Lähnemann, Jonas, Gao, Guanhui, Nicolai, Lars, Ramsteiner, Manfred, Trampert, Achim, Sanguinetti, Stefano, Brandt, Oliver, Geelhaar, Lutz
Publikováno v:
physica status solidi: rapid research letters 14, 1900615 (2020)
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 {\deg}C. In contrast to previous reports, t
Externí odkaz:
http://arxiv.org/abs/1910.07391
Autor:
Jaloustre, L., Le-Denmat, S., Auzelle, T., Azadmand, M., Geelhaar, L., Dahlem, F., Songmuang, R.
Piezoelectric semiconductor III-Nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics, demanding well-clarification of their piezoelectric behavior. Despit
Externí odkaz:
http://arxiv.org/abs/1910.01187
Autor:
Azadmand, Mani, Vichi, Stefano, Bietti, Sergio, Chrastina, Daniel, Bonera, Emiliano, Acciarri, Maurizio, Fedorov, Alexey, Tsukamoto, Shiro, Nötzel, Richard, Sanguinetti, Stefano
We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal dr
Externí odkaz:
http://arxiv.org/abs/1907.06939
Autor:
Musolino, Mattia, Carria, Egidio, Crippa, Danilo, Preti, Silvio, Azadmand, Mani, Mauceri, Marco, Isacson, Mathias, Calabretta, Michele, Messina, Angelo
Publikováno v:
In Microelectronic Engineering 1 April 2023 274
Autor:
Mehran Hiradfar, Reza Shojaeian, ahmad mohamadipour, Ali Azadmand, Mahdi Parvizi Mashhad, khashayar Atghiaee, Alireza Sabzevari
Publikováno v:
Journal of Cardio-Thoracic Medicine, Vol 10, Iss 2, Pp 981-986 (2022)
Introduction: Foreign body aspiration (FBA) is a life threatening medical condition and considered a surgical emergency in patients with acute symptoms. Eating disorders like pica may increase the rate of foreign body ingestion especially in toddlers
Externí odkaz:
https://doaj.org/article/ec70e7a103b649069268e8805f478256
Autor:
Sadeghi, Ramin, Shojaeian, Reza, Hiradfar, Mehran, Mohammadipour, Ahmad, Azadmand, Ali, Mashhadi, Mahdi Parvizi
Publikováno v:
In Journal of Pediatric Surgery August 2022 57(8):1518-1522
Autor:
Azadmand, Mani, Barabani, Luca, Bietti, Sergio, Chrastina, Daniel, Bonera, Emiliano, Acciarri, Maurizio, Fedorov, Alexey, Tsukamoto, Shiro, Nötzel, Richard, Sanguinetti, Stefano
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450{\deg}C). We find that the presence of droplets on the growth surface strongly
Externí odkaz:
http://arxiv.org/abs/1711.10714