Zobrazeno 1 - 10
of 254
pro vyhledávání: '"Azad Naeemi"'
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 2, Pp 1-8 (2024)
Implementing a compact optical integrated circuit by utilizing subwavelength plasmonic devices requires the design of compact and efficient photonic to plasmonic mode converters. Especially for plasmonic multiple-input devices such as logic gates tha
Externí odkaz:
https://doaj.org/article/e032bcbb9c1641cf85426d7f08be985b
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 13-21 (2024)
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes. One of the major challenges in scal
Externí odkaz:
https://doaj.org/article/c57ce292b48d402b8edde7ca486724fd
Publikováno v:
IEEE Open Journal of the Computer Society, Vol 4, Pp 50-61 (2023)
In this article, we propose a generic design methodology to achieve area-efficient reconfigurable logic circuits by using exact synthesis based on Boolean satisfiability (SAT) solver. The proposed methodology better leverages the high representation
Externí odkaz:
https://doaj.org/article/abd5e22c1a034fc591cd01c3e1a34a8b
Autor:
Piyush Kumar, Azad Naeemi
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 2, Pp 185-193 (2022)
This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random access memory (MRAM) by sharing the SOT channel and write transistor among multiple magnetic tunnel junctions (MTJs). We use two write mechanisms to selectively
Externí odkaz:
https://doaj.org/article/b8a6e6e341f54f8e961469d2a1673757
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 4, Pp 1-10 (2022)
Plasmonic metal-insulator-metal waveguide (MIM WG) is a promising building block of devices of a plasmonic computing system, and metal-semiconductor-metal (MSM) WG offers high-speed detection of plasmon signals. MIM and MSM WG couplers are an essenti
Externí odkaz:
https://doaj.org/article/3307cd5106d84e578d4b1a8f30192e3f
Autor:
Siri Narla, Piyush Kumar, Ann Franchesca Laguna, Dayane Reis, X. Sharon Sharon, Michael Niemier, Azad Naeemi
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 1, Pp 44-52 (2022)
This article proposes a novel magnetoelectric (ME) effect-based ternary content addressable memory (TCAM). The potential array-level write and search performances of the proposed ME-TCAM are studied using experimentally calibrated compact physical mo
Externí odkaz:
https://doaj.org/article/76c8226b54e545109fd7ec2b96f932b3
Autor:
Hai Li, Dmitri E. Nikonov, Chia-Ching Lin, Kerem Camsari, Yu-Ching Liao, Chia-Sheng Hsu, Azad Naeemi, Ian A. Young
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 1, Pp 10-18 (2022)
Spintronic devices provide a promising beyond-complementary metal-oxide-semiconductor (CMOS) device option, thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multiphysics dynamics, a rigorous treatment of both
Externí odkaz:
https://doaj.org/article/a2028be671144baab2624ec15f769887
Autor:
Azad Naeemi
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp ii-iii (2023)
Welcome to the seventh volume, second semiannual issue of IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (JXCDC), a multidisciplinary, open-access IEEE journal that is focused on publishing seminal research in the explorat
Externí odkaz:
https://doaj.org/article/ab2104ed61174f699e16b255f1f3bdec
Autor:
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 674-680 (2020)
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties neede
Externí odkaz:
https://doaj.org/article/b33005b56c8b478d842c17dbd013fc64
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 1, Pp 9-17 (2020)
In this article, we present a cross-layer optimization and benchmarking of various spintronic memory devices, including spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling
Externí odkaz:
https://doaj.org/article/3b8e2c049d714f479bc09dabb6df5eb8