Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Ayumi Onaka-Masada"'
Autor:
Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Sho Nagatomo, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita
Publikováno v:
Crystals, Vol 14, Iss 9, p 748 (2024)
The surface recrystallization model of the fully amorphized C3H5-molecular-ion-implanted silicon (Si) substrate is investigated. Transmission electron microscopy is performed to observe the amorphous/crystalline interface near the C3H5-molecular-ion-
Externí odkaz:
https://doaj.org/article/07fe0759e4b44756b9bb841d8deaa157
Autor:
Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita
Publikováno v:
Crystals, Vol 14, Iss 2, p 112 (2024)
In this study, we investigate the initial rapid recrystallization of a discretely amorphized C3H5-molecular-ion-implanted silicon (Si) substrate surface in the subsequent thermal annealing treatment through the analysis of plan-view transmission elec
Externí odkaz:
https://doaj.org/article/a8bb5c1b932441e8b25416d9901fe0d9
Autor:
Kazunari Kurita, Takeshi Kadono, Ryosuke Okuyama, Ayumi Onaka-Masada, Satoshi Shigematsu, Ryo Hirose, Koji Kobayashi, Akihiro Suzuki, Hidehiko Okuda, Yoshihiro Koga
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 720-727 (2022)
We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteris
Externí odkaz:
https://doaj.org/article/b1999326c971427aaf04d071dcdfa72e
Autor:
Takeshi Kadono, Ryo Hirose, Ayumi Onaka-Masada, Koji Kobayashi, Akihiro Suzuki, Ryosuke Okuyama, Yoshihiro Koga, Atsuhiko Fukuyama, Kazunari Kurita
Publikováno v:
Sensors, Vol 22, Iss 21, p 8258 (2022)
Using a new implantation technique with multielement molecular ions consisting of carbon, hydrogen, and phosphorus, namely, CH2P molecular ions, we developed an epitaxial silicon wafer with proximity gettering sinks under the epitaxial silicon layer
Externí odkaz:
https://doaj.org/article/64166cd2a771410cb9b5d969e801b745
Autor:
Ayumi Onaka-Masada, Ryosuke Okuyama, Satoshi Shigematsu, Hidehiko Okuda, Takeshi Kadono, Ryo Hirose, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1200-1206 (2018)
Gettering sinks for metallic impurities formed by carbon-cluster ion implantation in epitaxial silicon wafers have been investigated using technology computer-aided design and atom probe tomography (APT). We found that the defects formed by carbon-cl
Externí odkaz:
https://doaj.org/article/27b63c310e5b456287a39010d802efb6
Autor:
Ayumi Onaka-Masada, Takeshi Kadono, Ryosuke Okuyama, Ryo Hirose, Koji Kobayashi, Akihiro Suzuki, Yoshihiro Koga, Kazunari Kurita
Publikováno v:
Sensors, Vol 20, Iss 22, p 6620 (2020)
The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current
Externí odkaz:
https://doaj.org/article/1a8fdfce2f654b92ac35dab11f2aadff
Autor:
Kazunari Kurita, Takeshi Kadono, Satoshi Shigematsu, Ryo Hirose, Ryosuke Okuyama, Ayumi Onaka-Masada, Hidehiko Okuda, Yoshihiro Koga
Publikováno v:
Sensors, Vol 19, Iss 9, p 2073 (2019)
We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon−molecular−ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of
Externí odkaz:
https://doaj.org/article/466d87fec8ed4fe4b3b828667530b1e3
Autor:
Hidehiko Okuda, Koji Kobayashi, Takeshi Kadono, Ryosuke Okuyama, Yoshihiro Koga, Ryo Hirose, Ayumi Onaka-Masada, Satoshi Shigematsu, Akihiko Suzuki, Kazunari Kurita
Publikováno v:
IEEE Journal of the Electron Devices Society. 10:720-727
Complementary metal-oxide-semiconductor (CMOS) image sensors have widely been used in internet of thinking (IoT) devices such as smartphones, smart watch and personal computer tablets [1] . The consumer market strongly requires higher sensitivity and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac3943fca4c3f09eabaae339cf78f8e0
https://doi.org/10.1109/jeds.2021.3135656
https://doi.org/10.1109/jeds.2021.3135656
Autor:
Akihiro Suzuki, Takeshi Kadono, Ryo Hirose, Koji Kobayashi, Ayumi Onaka-Masada, Ryosuke Okuyama, Yoshihiro Koga, Kazunari Kurita
Publikováno v:
Journal of The Electrochemical Society. 170:047512
We investigated the thermal behavior of dislocation loops formed in a CH3O-multielement-molecular-ion-implanted epitaxial silicon (Si) wafer by real-time cross-sectional TEM observation with in situ heating. We found that the CH3O-ion-implantation-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7131dd539f2a95fdcc25a92adcd4901
https://doi.org/10.1149/1945-7111/accd25
https://doi.org/10.1149/1945-7111/accd25
Autor:
Koji Kobayashi, Takeshi Kadono, Akihiro Suzuki, Ryo Hirose, Ayumi Onaka-Masada, Satoshi Shigematsu, Yoshihiro Koga, Ryosuke Okuyama, Kazunari Kurita, Hidehiko Okuda
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 478:99-103
The gettering behavior in a hydrocarbon molecular (C3H5) ion implanted region was investigated using atom probe tomography (APT) with the aim of improving electrical properties of CMOS image sensors (CISs) and stacked CISs. APT clarified the formatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc7a9462cc7fa92f42c11db468126271
https://doi.org/10.1016/j.nimb.2020.05.017
https://doi.org/10.1016/j.nimb.2020.05.017