Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Ayub Fathimulla"'
Autor:
H. Hier, Keith W. Goossen, Ayub Fathimulla, Leye Aina, Nupur Bhargava, Victor A. Rodriguez-Toro, James Kolodzey, Ramsey Hazbun, L. Ramdas Ram-Mohan
Publikováno v:
Infrared Physics & Technology. 69:211-217
The addition of nitrogen to III–V alloys has been widely studied as a method of modifying the band gap for mid-infrared (IR) applications. Lattice matching these alloys to convenient substrates such as GaSb, however, is challenging due to the signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a0198e211ff98ee8c4c759b78a13a90
https://doi.org/10.1016/j.infrared.2015.01.023
https://doi.org/10.1016/j.infrared.2015.01.023
Autor:
Ayub Fathimulla, H. Hier, Matthew Coppinger, Leye Aina, Mark Lecates, James Kolodzey, Nurpur Bhargava, Keith W. Goossen
Publikováno v:
Infrared Physics & Technology. 52:310-316
This paper will describe the first-of-a-kind development and demonstration of dilute nitride strained layer superlattice detectors with detectivity as high as 4 × 10 10 cm Hz 1/2 /W and cut-off wavelength of 11-μm for an LWIR design and a cut-off w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::961bed1bc95575ff2320c448e3c29782
https://doi.org/10.1016/j.infrared.2009.05.011
https://doi.org/10.1016/j.infrared.2009.05.011
Autor:
Patrick Roblin, Suk Keun Myoung, S.B. Bibyk, Young-Gi Kim, D. Chaillot, Ayub Fathimulla, J. Strahler
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 56:65-76
This paper presents a frequency-selective RF vector predistortion linearization system for RF multicarrier power amplifiers (PAs) affected by strong differential memory effects. Differential memory effects can be revealed in two-tone experiment by th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cfabfa913e4c4256f9ae187708a2560
https://doi.org/10.1109/tmtt.2007.912241
https://doi.org/10.1109/tmtt.2007.912241
Publikováno v:
Journal of Applied Physics. 79:2502-2508
We present simulation results on the current‐voltage (I‐V) characteristics of an InP‐based AlAs/InGaAs resonant tunneling diode (RTD) with InAs subwell. Space‐charge limited transport is accounted for using a self‐consistent electrostatic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c9ee5162069191f195205b56546da3
https://doi.org/10.1063/1.361104
https://doi.org/10.1063/1.361104
Autor:
Mulpuri V. Rao, Paul B. Klein, Peter H. Chi, Harry B. Dietrich, Ayub Fathimulla, David S. Simons
Publikováno v:
Journal of Applied Physics. 75:7774-7778
Si, Ge, and Be implantations were performed into (x11)A‐oriented semi‐insulating InP and GaAs substrates for x≤4. For comparison some of the implantations were also performed into (110)‐ and (100)‐oriented substrates. For 200 keV/5×1013 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a86640bbca01951f9efa2d336ee1393
https://doi.org/10.1063/1.356612
https://doi.org/10.1063/1.356612
Autor:
Jim Foshee, Parminder Ghuman, Sachi Babu, Harry Hier, Mark Lecates, Leye Aina, Ayub Fathimulla
Publikováno v:
Advanced Photon Counting Techniques III.
This paper reports the demonstration of single photon counting receivers with pulse detection efficiency as high as 68% for 2 photons and single photon counting probabilities as high as 44% at 1550-nm, 1 MHz rate and room temperature and with linear-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19bbce3d58507c735eb137442fc47a6e
https://doi.org/10.1117/12.818820
https://doi.org/10.1117/12.818820
Publikováno v:
Optical Fiber Communication Conference and National Fiber Optic Engineers Conference.
We report the development of ultrasensitive photoreceivers, based on ultra high gain and low excess noise APDs, with sensitivities of −35.5 dBm at 2.488 Gbps and 10−10 BER and the potential for 6–12 dB sensitivity enhancement at higher bit rate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e72a18ef32f52322f6ee1e29dab515
https://doi.org/10.1364/nfoec.2009.jtha27
https://doi.org/10.1364/nfoec.2009.jtha27
Publikováno v:
SPIE Proceedings.
We report high gain, high sensitivity 1064-1550 nm avalanche photodiodes (APDs) that are capable of single photon counting in the linear mode below the breakdown voltage and at room temperature. Epitaxial Technologies has developed AIInAs/GaInAs APDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92ebc06dfccba9b00f0aa67800563aa0
https://doi.org/10.1117/12.753762
https://doi.org/10.1117/12.753762
Autor:
Mark Lecates, Robert Dwarkin, Harry Hier, Ayub Fathimulla, Leye Aina, David Johnson, Sachi Babu, Jim Foshee
Publikováno v:
SPIE Proceedings.
Epitaxial Technologies has developed a single photon counting photoreceiver that can operate in the linear mode to avoid the drawbacks of Geiger mode detectors. The Company's linear single photon counting photoreceiver array technology is based on ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5e2a342814e247f6149e86c8ab2839a
https://doi.org/10.1117/12.721135
https://doi.org/10.1117/12.721135
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
The authors present simulation results demonstrating the impact of 3D scattering on the I-V characteristics of an InP-based resonant tunneling diode (RTD). Of particular interest is interface-roughness scattering at the InGaAs/AlAs and InGaAs/InAs in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da556ab229b4bcbfc2bc30d882e287f
https://doi.org/10.1109/iciprm.1993.380629
https://doi.org/10.1109/iciprm.1993.380629