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Electrically active defects in deep preamorphized single-crystal silicon layers.

Autor: Ayres, J. R., Brotherton, S. D.

Publikováno v: Journal of Applied Physics; 3/15/1992, Vol. 71 Issue 6, p2702, 8p, 11 Graphs

Deep levels of copper in silicon.

Autor: Brotherton, S. D., Ayres, J. R., Gill, A., van Kesteren, H.W., Greidanus, F. J. A. M.

Publikováno v: Journal of Applied Physics; 9/1/1987, Vol. 62 Issue 5, p1826, 7p, 1 Diagram, 3 Charts, 5 Graphs

Influence of melt depth in laser crystallized poly-Si thin film transistors.

Autor: Brotherton, S.D., McCulloch, D.J., Gowers, J. P., Ayres, J. R., Trainor, M. J.

Publikováno v: Journal of Applied Physics; 10/15/1997, Vol. 82 Issue 8, p4086, 9p, 3 Black and White Photographs, 14 Graphs

Hot-carrier induced degradation of Gate Overlapped Lightly Doped Drain (GOLDD) polysilicon thin-film transistors

Autor: Valletta A., Mariucci L., Fortunato G., Brotherton S. D., Ayres J. R.

Publikováno v: I.E.E.E. transactions on electron devices 49 (2002): 636–642.
info:cnr-pdr/source/autori:Valletta A., Mariucci L., Fortunato G., Brotherton S. D., Ayres J. R./titolo:Hot-carrier induced degradation of Gate Overlapped Lightly Doped Drain (GOLDD) polysilicon thin-film transistors/doi:/rivista:I.E.E.E. transactions on electron devices/anno:2002/pagina_da:636/pagina_a:642/intervallo_pagine:636–642/volume:49

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::ad4284d8a37ae0b90ebdfeab9188f8cc
https://publications.cnr.it/doc/24412