Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Aymeric Maros"'
Autor:
Abhinandan Gangopadhyay, Chaomin Zhang, Aymeric Maros, Nikolai Faleev, Richard R. King, Christiana B. Honsberg, David J. Smith
Publikováno v:
Scripta Materialia. 225:115150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::041db871d70f4d47ce0a5d63b0ee24e9
https://doi.org/10.1016/j.scriptamat.2022.115150
https://doi.org/10.1016/j.scriptamat.2022.115150
Publikováno v:
Acta Materialia. 162:103-115
The creation of structural defects in low-mismatched GaAs/GaAs0.92Sb0.08/GaAs(001) heterostructures and their evolution during strain relaxation have been studied using transmission electron microscopy as well as high-resolution x-ray diffraction and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fa2ed0f3f1dc31ad580e8f3675b5152
https://doi.org/10.1016/j.actamat.2018.09.042
https://doi.org/10.1016/j.actamat.2018.09.042
Autor:
Mikhail Naydenkov, Radek Roucka, Sabeur Siala, Philip Dowd, Aymeric Maros, Ding Ding, Ferran Suarez, Ligang Gao
Publikováno v:
Optical Components and Materials XVII.
Emerging applications in sensing, LIDAR, spectroscopy, and SWIR imaging require photodetectors operating at wavelengths beyond the range of silicon technology and that can be produced cost-effectively for very high-volume consumer and commercial mark
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad94cf2b9d3aacaf429078be0fb25b64
https://doi.org/10.1117/12.2546295
https://doi.org/10.1117/12.2546295
Publikováno v:
Scripta Materialia. 153:77-80
Dissociated 60° dislocations in low-misfit GaAs/GaAs0.92Sb0.08/GaAs(001) heterostructures are investigated using aberration-corrected scanning transmission electron microscopy. Intrinsic stacking faults bounded by 30° and 90° Shockley partial disl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86485dddfabe32b60b4d5d693eac33ff
https://doi.org/10.1016/j.scriptamat.2018.04.050
https://doi.org/10.1016/j.scriptamat.2018.04.050
Publikováno v:
IEEE Journal of Photovoltaics. 6:460-464
This paper investigates the molecular beam epitaxy (MBE) growth, material characterization, and performance testing of indium gallium nitride (InGaN)/GaN double-heterojunction solar cells. Structures with varying thicknesses and compositions of the I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::990648136f8b3aef299b74b807156364
https://doi.org/10.1109/jphotov.2015.2504790
https://doi.org/10.1109/jphotov.2015.2504790
Publikováno v:
Microscopy and Microanalysis. 25:2022-2023
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f587b4b61d6c230afc2c5d5c01d7192
https://doi.org/10.1017/s1431927619010845
https://doi.org/10.1017/s1431927619010845
Publikováno v:
Journal of Crystal Growth. 425:49-53
The optical properties of three sets of InGaAs/GaAs multiple quantum well (MQW) structures grown by molecular beam epitaxy and previously characterized by x-ray diffraction for crystal perfection were investigated. The correlations between growth con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e89e7a10f89ce6ab4c61da9a867c33ab
Autor:
Christiana B. Honsberg, Nikolai Faleev, Chaomin Zhang, Aymeric Maros, Hongfeng Wang, Jongwon Lee, Richard R. King, Stephen Bremner
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
In this work, we investigate the effect of using bismuth as a surfactant during the growth of GaNAsSb solar cells lattice-matched to GaAs. First, we present a detailed analysis of the device characteristics grown without Bi. Low current collection, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a90e29aa733c6b85ee4e398d5196c7c2
https://doi.org/10.1109/pvsc.2017.8366439
https://doi.org/10.1109/pvsc.2017.8366439
Publikováno v:
Microscopy and Microanalysis. 24:6-7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54971b40a083241a4a3ed13910d42cf6
https://doi.org/10.1017/s1431927618000521
https://doi.org/10.1017/s1431927618000521
Autor:
Jong Su Kim, Christiana B. Honsberg, Aymeric Maros, Richard R. King, Nikolai Faleev, Seung Hyun Lee
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
We report on the growth of 1-eV GaNAsSb lattice- matched to GaAs as an alternative material to the most commonly used GaInNAs(Sb). GaNAsSb layers were grown by plasma assisted molecular beam epitaxy with different N and Sb compositions. The electroni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be4a336182916cb0807d1c0bfdbf5531
https://doi.org/10.1109/pvsc.2016.7750048
https://doi.org/10.1109/pvsc.2016.7750048