Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Aykut Turfanda"'
Autor:
Aykut Turfanda, Hilmi Ünlü
Publikováno v:
Journal of Applied Physics. 133
We mimic bacterial learning and memory abilities in tungsten based two-sided single layers of WSeO, WSeS, WSeSe, and WSeTe, where the thickness of the material represents the growth in time. We aim to create a quantum memristor like system to show le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba285148ed52c5f98e575bca104e9699
https://doi.org/10.1063/5.0139576
https://doi.org/10.1063/5.0139576
Autor:
Aykut Turfanda, Hilmi Ünlü
Publikováno v:
Journal of Applied Physics. 132:124306
We propose three vertical heterostructures of two-dimensional materials composed of MoS[Formula: see text] and AlN single layers to emulate biological synaptic behaviors. We aim to show a so-called healthy synaptic behavior with an N vacancy-defected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6314f6b70cf3944f47cf2719ecf75e
https://doi.org/10.1063/5.0112920
https://doi.org/10.1063/5.0112920
Autor:
Aykut Turfanda, Max C. Lemme, Thorsten Wahlbrink, Melkamu Belete, Satender Kataria, Olof Engström, Sam Vaziri
Publikováno v:
Advanced Electronic Materials
Advanced electronic materials 6(3), 1900892 (2020). doi:10.1002/aelm.201900892
Advanced electronic materials 6(3), 1900892 (2020). doi:10.1002/aelm.201900892
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS2) as the active material. The vertical heterostructures consist of silicon (Si), vertically aligned MoS2, and chrome/gold metal electrodes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d49f0f2abe3b1d60b2c19bfe331291b
https://zenodo.org/record/3690214
https://zenodo.org/record/3690214
