Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Ayden Maralani"'
Autor:
Zhenlong Huang, Yifei Hao, Yang Li, Hongjie Hu, Chonghe Wang, Akihiro Nomoto, Taisong Pan, Yue Gu, Yimu Chen, Tianjiao Zhang, Weixin Li, Yusheng Lei, NamHeon Kim, Chunfeng Wang, Lin Zhang, Jeremy W. Ward, Ayden Maralani, Xiaoshi Li, Michael F. Durstock, Albert Pisano, Yuan Lin, Sheng Xu
Publikováno v:
Nature Electronics. 1:473-480
A method of fabricating a stretchable and flexible electronic device includes forming each of the functional layers is by: (i) forming on an elastomer substrate a conductive interconnect pattern having islands interconnected by bridges; (ii) applying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c031abf0231273d15e998dd75a324aa7
https://doi.org/10.1038/s41928-018-0116-y
https://doi.org/10.1038/s41928-018-0116-y
Publikováno v:
Sensors and Actuators A: Physical. 273:293-302
This paper describes modeling, optimization, fabrication, and characterization of silicon carbide (SiC) absolute pressure sensors that have concentrically matched differential capacitance output. The differential capacitance scheme is achieved by uti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d53996aef4cc69dc4584b4711b25a94
https://doi.org/10.1016/j.sna.2018.02.027
https://doi.org/10.1016/j.sna.2018.02.027
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 13:163-168
The main objective of this study is to develop pressure-sensing systems by integrating pressure transducers with the interface circuitry in one package that can withstand harsh environments, particularly high temperatures up to 600°C. To achieve tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e6e38996cc420b948c11cded66c9d8f
https://doi.org/10.4071/imaps.522
https://doi.org/10.4071/imaps.522
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2016:000051-000055
The main objective is to develop sensing systems by integrating transducers such as pressure sensing elements with the interface circuitry in one package that can withstand harsh environments, particularly high temperatures up to 600 °C. To achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::171e0f6fe3fd9a668d38462cdc85c6ab
https://doi.org/10.4071/2016-hitec-51
https://doi.org/10.4071/2016-hitec-51
Autor:
Jim C. Cheng, Wei-Cheng Lien, Ayden Maralani, Shi Qian Shao, Kristen L. Dorsey, Albert P. Pisano
Publikováno v:
Materials Science Forum. :636-639
In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47dc684ba705ab5c0ca0b59dc9a02082
https://doi.org/10.4028/www.scientific.net/msf.821-823.636
https://doi.org/10.4028/www.scientific.net/msf.821-823.636
Publikováno v:
2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS).
This work describes a silicon-carbide (SiC) based, micromachined harsh-environment pressure sensor that utilizes concentrically matched differential capacitance output (DCO) to transfer relatively small capacitance changes through very long cables an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15499697c3fb424df4d17ab7d7d681fe
https://doi.org/10.1109/memsys.2017.7863575
https://doi.org/10.1109/memsys.2017.7863575
Publikováno v:
Materials Science Forum. :1126-1129
Low power Silicon Carbide (SiC) devices and Integrated Circuits (ICs) in conjunction with SiC or Aluminum Nitride (AlN) sensing elements will enable sensing functions in high temperature environments up to 600 °C where no silicon based devices or ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae45fc423d10f3d2455bb40493c21fcf
https://doi.org/10.4028/www.scientific.net/msf.778-780.1126
https://doi.org/10.4028/www.scientific.net/msf.778-780.1126
Publikováno v:
Materials Science Forum. :1013-1016
In this work, a 4H-Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) capable of operating at high temperatures up to 673 K is demonstrated. Comprehensive characterization including current gain, early voltage, and intrinsic voltage gain was per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::316c60e0b0e78d1d0092bded5ecc43b1
https://doi.org/10.4028/www.scientific.net/msf.778-780.1013
https://doi.org/10.4028/www.scientific.net/msf.778-780.1013
Publikováno v:
Materials Science Forum. :1069-1072
Superior performance of the Silicon Carbide (SiC) semiconductor in high temperature and harsh environment is widely known. However, utilizing the Vertical Channel 4H–SiC JFET (SiC VJFET) for analog circuit design exhibits significant design challen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19b3fca459b29cc59957f4225f88428a
https://doi.org/10.4028/www.scientific.net/msf.740-742.1069
https://doi.org/10.4028/www.scientific.net/msf.740-742.1069
Publikováno v:
ESSDERC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7cb4263574ed78318cf9874b4ac274a
https://doi.org/10.1109/essderc.2014.6948777
https://doi.org/10.1109/essderc.2014.6948777