Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ayata Kurasaki"'
Autor:
Mutsumi Kimura, Ryo Sumida, Ayata Kurasaki, Takahito Imai, Yuta Takishita, Yasuhiko Nakashima
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract Artificial intelligence is a promising concept in modern and future societies. Presently, software programs are used but with a bulky computer size and large power consumption. Conversely, hardware systems named neuromorphic systems are sugg
Externí odkaz:
https://doaj.org/article/bdf9557e078a4dd2955f81d645aa4319
Autor:
Ryo Sumida, Mutsumi Kimura, Takahito Imai, Ayata Kurasaki, Yuta Takishita, Yasuhiko Nakashima
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Scientific Reports
Scientific Reports
Artificial intelligence is a promising concept in modern and future societies. Presently, software programs are used but with a bulky computer size and large power consumption. Conversely, hardware systems named neuromorphic systems are suggested, wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fae9af0d4826d0fdc79bc8cd57e0bf1
https://doaj.org/article/bdf9557e078a4dd2955f81d645aa4319
https://doaj.org/article/bdf9557e078a4dd2955f81d645aa4319
Autor:
Mutsumi Kimura, Tomoya Kameda, Atsushi Kondo, Tokiyoshi Matsuda, Toshimasa Hori, Ayata Kurasaki, Yasuhiko Nakashima, Takumi Tsuno, Ryo Tanaka, Kaito Hashimoto, Kenta Umeda, Sumio Sugisaki, Junpei Shimura, Keisuke Ikushima
Publikováno v:
ECS Transactions. 90:157-166
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bea4940d35b5948dad58196da9c5938a
https://doi.org/10.1149/09001.0157ecst
https://doi.org/10.1149/09001.0157ecst
Autor:
Ryo Tanaka, Mutsumi Kimura, Mamoru Furuta, Tokiyoshi Matsuda, Daichi Koretomo, Ayata Kurasaki, Yusaku Magari, Sumio Sugisaki
Publikováno v:
Materials
Volume 12
Issue 19
Materials, Vol 12, Iss 19, p 3236 (2019)
Volume 12
Issue 19
Materials, Vol 12, Iss 19, p 3236 (2019)
We have found a memristive characteristic of an amorphous Ga-Sn-O (&alpha
GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lo
GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::785c35253f1c7e6db3e342c9d321e708
Publikováno v:
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We have studied Resistive Random Access Memory (ReRAM) using Ga-Sn-O (GTO) thin film. The device fabricated in this study has a sandwich structure in which two layers of GTO thin films with different resistance values are sandwiched between electrode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c275f695b89a392c7682e9a1b35b6177
https://doi.org/10.23919/am-fpd.2019.8830625
https://doi.org/10.23919/am-fpd.2019.8830625
Publikováno v:
SID Symposium Digest of Technical Papers. 52:337-337
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cd350af76fe33296c42ffb0f8cd38e1
https://doi.org/10.1002/sdtp.14485
https://doi.org/10.1002/sdtp.14485
Publikováno v:
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Variable Resistive Memorys (VRMs) are promising devices with many advantages such as simple structure, high speed, etc. Amorphous oxide semiconductors (AOS) thin films have been used for many electric devices. In this presentation, we propose a new A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c5735e7ada1dbb6f1bf8310c4b92fca
https://doi.org/10.23919/am-fpd.2018.8437408
https://doi.org/10.23919/am-fpd.2018.8437408
Publikováno v:
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
In this presentation, we propose an amorphous oxide semiconductors (AOSs) In-Ga-Zn-O(IGZO) thin film for a memristor characteristic device. We fabricated the memristor characteristic device active layer using IGZO and electrodes using aluminum by phy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d8339572d2a6b93300de99e85104b4e
https://doi.org/10.1109/imfedk.2018.8581953
https://doi.org/10.1109/imfedk.2018.8581953