Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ayanori Ikoshi"'
Autor:
Manabu Yanagihara, Masaya Mannoh, Hideyuki Okita, Saichiro Kaneko, Michinobu Tsuda, Hisayoshi Matsuo, Kenichiro Tanaka, Yasuhiro Uemoto, Akihiko Nishio, Masayuki Kuroda, Keiichi Matsunaga, Masahiro Hikita, Takahiro Sato, Ayanori Ikoshi, Tatsuo Morita
Publikováno v:
IEEE Transactions on Electron Devices. 64:1026-1031
A new gate recess process technology has been successfully implemented in normally off GaN-based gate injection transistors, in order to improve the process stability. In this process, unlike the conventional gate recess process, the initial AlGaN ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8af144d407aea0dc71d8ca99caac6e43
https://doi.org/10.1109/ted.2017.2653847
https://doi.org/10.1109/ted.2017.2653847
Autor:
Masahiro Hikita, Masahiro Toki, Yasuhiro Uemoto, Hiroto Yamagiwa, Ayanori Ikoshi, Kenichiro Tanaka, Kazuki Suzuki, Daijiro Arisawa, Tetsuzo Ueda, Manabu Yanagihara
Publikováno v:
IRPS
Reliability of a GaN-based Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under continuous switching operation is investigated to extract the lifetime under a practical switching application. Switching lifetimes are deduced by varying ambie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9643103594f017b842e32d508e74848e
https://doi.org/10.1109/irps.2018.8353594
https://doi.org/10.1109/irps.2018.8353594
Publikováno v:
Integrated Circuits and Systems ISBN: 9783319779935
In recent years, as GaN power transistors come into widespread use as switches for power converter applications, it is all the more crucial and inevitable to guarantee their reliability. In this chapter, we discuss how to evaluate the robustness of G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02c0b8f9c554fad9b4626df7e54415f4
https://doi.org/10.1007/978-3-319-77994-2_5
https://doi.org/10.1007/978-3-319-77994-2_5
Autor:
Kenichiro Tanaka, Tetsuzo Ueda, Tatsuo Morita, Tsuguyasu Hatsuda, Masahiro Ishida, Masahiro Toki, Masahiro Hikita, Ayanori Ikoshi, Kazuki Yokoyama, Yasuhiro Uemoto, Manabu Yanagihara
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
Reliability tests on 600V-rated GaN-based normally-off hybrid-drain-embedded Gate Injection Transistor (HD-GIT) are performed. High-temperature reverse-bias test on HD-GIT reveals that the lifetime is dependent on the leakage current before the relia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ec0fb458dcfbd5b478782126e5cbf61
https://doi.org/10.1109/irps.2017.7936308
https://doi.org/10.1109/irps.2017.7936308
Autor:
Yasuhiro Uemoto, Kenichiro Tanaka, Satoru Takahashi, Saichiro Kaneko, Tetsuzo Ueda, Tatsuo Morita, Masahiro Hikita, Ayanori Ikoshi, Masayuki Kuroda, Hideyuki Okita, Manabu Yanagihara
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Current collapse at high drain voltage in a GaN-based transistor is successfully suppressed by the introduction of p-GaN region which is placed beside the drain of a Gate Injection Transistor (GIT). The additional p-GaN region enables hole injection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9ce3ddd44c9661fef4c2577b66cd733
https://doi.org/10.1109/ispsd.2015.7123384
https://doi.org/10.1109/ispsd.2015.7123384
Autor:
Masahiro Hikita, Tatsuo Morita, Hisayoshi Matsuo, Manabu Yanagihara, Hidekazu Umeda, Tsuyoshi Tanaka, Daisuke Ueda, Tetsuzo Ueda, Jun Shimizu, Ayanori Ikoshi, Yasuhiro Uemoto
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
We present a GaN monolithic inverter IC on Si substrate and successful motor-drive by it for the first time. Taking advantages of the bi-directional operation free from the forward voltage off-set [1], the inverter can be operated just by the integra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ac2a8f103884589846301f6dcdea29
https://doi.org/10.1109/iedm.2009.5424397
https://doi.org/10.1109/iedm.2009.5424397
Autor:
Hiroto Yamagiwa, Satoru Takahashi, Masayuki Kuroda, Masahiro Hikita, Hidekazu Umeda, Hiroaki Ueno, Hideyuki Okita, Kenichiro Tanaka, Manabu Yanagihara, Tetsuzo Ueda, Tatsuo Morita, Masahiro Ishida, Yasuhiro Uemoto, Ayanori Ikoshi, Saichiro Kaneko, Hidetoshi Ishida
Publikováno v:
Applied Physics Letters. 107:163502
Current collapse is suppressed up to 800 V of drain voltage in our proposed device, Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT), where an additional p-GaN layer is grown on the AlGaN barrier layer and is connected to the drain electrode.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1daf428801f6085012311b111a8d873d
https://doi.org/10.1063/1.4934184
https://doi.org/10.1063/1.4934184
Autor:
Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda, Saichiro Kaneko, Masayuki Kuroda, Ayanori Ikoshi, Hiroto Yamagiwa, Hideyuki Okita, Masahiro Hikita, Manabu Yanagihara, Yasuhiro Uemoto, Satoru Takahashi, Hiroaki Ueno, Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda
Publikováno v:
Applied Physics Letters; 10/19/2015, Vol. 107 Issue 16, p1-4, 4p, 2 Diagrams, 1 Chart, 4 Graphs