Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Ayan, Roy Chaudhuri"'
Autor:
Biswajit Jana, Ayan Roy Chaudhuri
Publikováno v:
Chips, Vol 3, Iss 3, Pp 235-257 (2024)
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-f
Externí odkaz:
https://doaj.org/article/a13652f89b864266af10716b79bce6be
Autor:
Krishna Rudrapal, Sourav Das, Rabaya Basori, Pallab Banerji, Venimadhav Adyam, Ayan Roy Chaudhuri
Publikováno v:
AIP Advances, Vol 13, Iss 8, Pp 085011-085011-6 (2023)
This work demonstrates forming-free and self-limiting resistive switching characteristics of non-stoichiometric WO3−x-based nanoscale devices without using any selector layer. Pt/W/WO3−x/Pt cross point and crossbar devices with individual cell di
Externí odkaz:
https://doaj.org/article/b7ca630819564d7082bef7b331af74d7
Autor:
Biswajit Jana, Kritika Ghosh, Krishna Rudrapal, Pallavi Gaur, P. K. Shihabudeen, Ayan Roy Chaudhuri
Publikováno v:
Frontiers in Physics, Vol 9 (2022)
A great deal of interest has grown in both academia and industry toward flexible multiferroics in the recent years. The coupling of ferromagnetic properties with ferroelectric properties in multiferroic materials opens up many opportunities in applic
Externí odkaz:
https://doaj.org/article/6cc428125ade4febb8d18179bb8e2d88
Autor:
Kritika Ghosh, Avijit Dhara, Sajal Dhara, Andreas Fissel, Hans-Jörg Osten, Ayan Roy Chaudhuri
Publikováno v:
ACS Applied Nano Materials. 5:9567-9575
Autor:
P. K. Shihabudeen, Ayan Roy Chaudhuri
Publikováno v:
Nanoscale. 14:5185-5193
Nitrogen doped In2O3/ZnO nanocomposite thin films show superior ethanol sensing characteristics compared to pristine In2O3/ZnO thin films. The improved performance has been attributed to nitrogen doping and the synergistic effects in the composites.
Publikováno v:
The Journal of Physical Chemistry C. 125:5315-5326
Ferroelectric (FE) materials usually possess very high band gap (∼3–4 eV) and extremely poor electrical conductivity, which renders them unsuitable for photovoltaic applications. Here, we demonstra...
Publikováno v:
Journal of Physics D: Applied Physics. 56:205302
High density memory storage capacity, in-memory computation and neuromorphic computing utilizing memristors are expected to solve the limitation of von-Neumann computing architecture. Controlling oxygen vacancy (V O) defects in metal oxide thin film
Autor:
P K, Shihabudeen, Ayan, Roy Chaudhuri
Publikováno v:
Nanoscale. 14(13)
Nanocomposite metal oxide thin films exhibit promising qualities in the field of gas sensors due to the opportunities provided by the heterointerface formation. In this work, we present the synthesis of nitrogen doped mesoporous In
Autor:
Devarshi Chakrabarty, Avijit Dhara, Kritika Ghosh, Aswini Kumar Pattanayak, Ayan Roy Chaudhuri, Sajal Dhara
Publikováno v:
Frontiers in Optics + Laser Science 2022 (FIO, LS).
Linearly polarized excitons in anisotropic semiconductors like ReS2 pose intriguing possibilities in photonics and condensed matter physics. Here, we stack multilayer ReS2 on a dielectric mirror, creating anisotropic exciton-polaritons which show tun
Autor:
Suryakanta Mishra, Aminur Rahaman, Pratap Pal, Archna Sagdeo, Debraj Choudhury, Dinesh Topwal, Krishna Rudrapal, Ranjit Mishra, Ayan Roy Chaudhuri, Keerthana, Venimadhav Adyam
Publikováno v:
Physical Review B. 104
A spark-plasma sintered ${\mathrm{GdCrO}}_{3}$ (SPS-GCO) is found to stabilize in its ferroelectric phase beyond room temperature. The intrinsic nature of this room-temperature ferroelectricity is established using ferroelectric positive-up--negative