Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Aya Shindome"'
Autor:
Matthew Smith, Yosuke Kajiwara, Hiroshi Ono, Po-Chin Huang, Daimotsu Kato, Akira Mukai, Aya Shindome, Masahiko Kuraguchi
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27e837f8363a9cc63a7e740db63e30a1
https://doi.org/10.1109/wipda49284.2021.9645147
https://doi.org/10.1109/wipda49284.2021.9645147
Autor:
Aya Shindome, Toshiki Hikosaka, A. Mukai, Shinya Nunoue, Daimotsu Kato, Masahiko Kuraguchi, Hiroshi Ono, Yosuke Kajiwara
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The channel mobility and positive bias temperature instability is improved by the additional two processes of the gate structures in recessed normally-off GaN-MOSFETs. The one is the surface treatment for removal of the damage by the recess etching.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0068bfb27c50f2fc9688aae33feac869
https://doi.org/10.1109/iciprm.2019.8819114
https://doi.org/10.1109/iciprm.2019.8819114
Autor:
Yosuke Kajiwara, Miki Yumoto, Kunio Tsuda, Masahiko Kuraguchi, Shigeto Fukatsu, Hisashi Saito, Aya Shindome, Kohei Oasa, Yoshiharu Takada
Publikováno v:
physica status solidi c. 13:332-335
Enhancement-mode GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) have been reported. We utilized the atomic layer deposition (ALD) method for the fabrication process of the gate dielectric, in order to suppress plasma damage and obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bed7170291998b16d6419bdb5054048
https://doi.org/10.1002/pssc.201510225
https://doi.org/10.1002/pssc.201510225
Autor:
Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Shinya Nunoue, Masahiko Kuraguchi, Jumpei Tajima, Aya Shindome, Toshiki Hikosaka, Daimotsu Kato
Publikováno v:
Japanese Journal of Applied Physics. 59:SGGD13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::107920eef68e679dcdbc81467a21d0ce
https://doi.org/10.35848/1347-4065/ab6b7f
https://doi.org/10.35848/1347-4065/ab6b7f
Autor:
Daimotsu Kato, Hiroshi Ono, Kenjiro Uesugi, Shimizu Tatsuo, Masahiko Kuraguchi, Y. Nishida, Aya Shindome, A. Mukai, Toshiya Yonehara, Akira Yoshioka, Yosuke Kajiwara
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
Threshold voltage shift of GaN MOSFET in positive bias temperature instability test was drastically suppressed by reducing certain impurity densities in SiO 2 gate dielectric. An analysis to estimate the charge trap level showed electron traps in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64dfc051ee0c67d2a5dcdcd3f3a0305
https://doi.org/10.1109/iedm.2017.8268490
https://doi.org/10.1109/iedm.2017.8268490
Autor:
Aya Shindome, Masahiko Kuraguchi, Yosuke Kajiwara, Kenjiro Uesugi, Toshiya Yonehara, Shinya Nunoue, Daimotsu Kato, H. Saito, Akira Yoshioka
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f07fa69739b09ef7d78f3b66950aa80c
https://doi.org/10.7567/ssdm.2017.n-5-02
https://doi.org/10.7567/ssdm.2017.n-5-02
Autor:
Aya Shindome, Toshiya Yonehara, Toshiki Hikosaka, Daimotsu Kato, Shinya Nunoue, Masahiko Kuraguchi, Yosuke Kajiwara, Kenjiro Uesugi
Publikováno v:
physica status solidi (a). 215:1700511
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::210134930b31c78283b1565edf804964
https://doi.org/10.1002/pssa.201700511
https://doi.org/10.1002/pssa.201700511
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf957fbbd4ad5e7a7dc19d4a53633bf7
https://doi.org/10.7567/ssdm.2012.c-5-5l
https://doi.org/10.7567/ssdm.2012.c-5-5l
Publikováno v:
Japanese Journal of Applied Physics. 53:04EN02
The switching conditions of graphene resistive random access memories (ReRAMs) are studied. Multi terminal devices are used to clarify the location of ReRAM operations. It is shown that a metal/graphene interface has no effect on ReRAM operations and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d94498c3eceafa43da443fce5d370f4
https://doi.org/10.7567/jjap.53.04en02
https://doi.org/10.7567/jjap.53.04en02