Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Aya Hino"'
Publikováno v:
Frontiers in Pharmacology, Vol 12 (2021)
Evaluation of proarrhythmic properties is critical for drug discovery. In particular, QT prolongation in electrocardiograms has been utilized as a surrogate marker in many evaluation systems to assess the risk of torsade de pointes and lethal ventric
Externí odkaz:
https://doaj.org/article/85774f432fd94c6d9dff8191d5c6a416
Autor:
Aya Hino
Publikováno v:
International Quarterly for Asian Studies, Vol 50, Iss 3-4 (2020)
In the field of urban studies, there has been a call to develop “new geographies of theory” to accommodate “Asian” experiences of urbanisation in theory-building practices, which are said to have been based largely on “Western” experience
Externí odkaz:
https://doaj.org/article/60c9c090a53d409c96cdde7780d22454
Publikováno v:
ECS Transactions. 86:117-123
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P247-P252
Publikováno v:
ECS Transactions. 75:157-162
Because of their superior performances to amorphous silicon (a-Si) semiconductors, amorphous oxide semiconductors have been attracting considerable attentions as backplanes for liquid crystal displays (LCDs) and organic light emitting diode displays
Autor:
Yasuyuki Takanashi, Tomoya Kishi, Shinya Morita, Aya Hino, Hiroshi Goto, Toshihiro Kugimiya, Kazushi Hayashi, Hiroaki Tao, Mototaka Ochi
Publikováno v:
IEICE Transactions on Electronics. :1055-1062
SUMMARY We have investigated the microwave-detected photoconductivity responses from the amorphous In–Ga–Zn–O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT per
Autor:
Aya Hino, Kazushi Hayashi, Toshihiro Kugimiya, Hiroshi Goto, Yasuyuki Takanashi, Shinya Morita, Hiroaki Tao
Publikováno v:
MRS Proceedings. 1633:55-60
In the present study, the sub-gap states of amorphous In-Ga-Zn-O (a-IGZO) thin films treated with various process conditions have been evaluated by means of capacitance-voltage (C-V) characteristics and isothermal capacitance transient spectroscopy (
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:P156-P159
In the present study, the electronic structure and film composition at the back channel surface of amorphous In-Ga-Zn-O (a-IGZO) thin films were characterized to discuss the origin of the threshold voltage shift in the a-IGZO TFTs under light negativ
Publikováno v:
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
A comparative study on light-induced negative-bias stress stabilities in amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) was performed by means of photoinduced transient spectroscopy (PITS). When the a-IGZO thin films were deposited with 4
Publikováno v:
Journal of Information Display. 13:61-66
The double-layered Ti/Si barrier metal is demonstrated for the source/drain Cu interconnections in oxide semiconductor thin-film transistors (TFTs). The transmission electromicroscopy and ion mass spectroscopy analyses revealed that the double-layere