Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Axel R Persson"'
Autor:
Arnar M. Vidarsson, Axel R. Persson, Jr-Tai Chen, Daniel Haasmann, Jawad Ul Hassan, Sima Dimitrijev, Niklas Rorsman, Vanya Darakchieva, Einar Ö. Sveinbjörnsson
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111121-111121-7 (2023)
Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal–oxide–semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the
Externí odkaz:
https://doaj.org/article/47769d9eaac04af9925d4bf883195c57
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Structural defects in Mg-doped GaN were analyzed using high-resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy. The defects, in the shape of inverted pyramids, appear at high concentrations o
Externí odkaz:
https://doaj.org/article/adf69f09c2e7437591686a3d9339076c
Autor:
Daniela Gogova, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson, Per O. Å. Persson, Olof Kordina, Bo Monemar, Matthew Hilfiker, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva
Publikováno v:
AIP Advances, Vol 12, Iss 5, Pp 055022-055022-7 (2022)
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial gr
Externí odkaz:
https://doaj.org/article/838571abaa974ef99a971173bbe4aea5
Autor:
Carina B. Maliakkal, Daniel Jacobsson, Marcus Tornberg, Axel R. Persson, Jonas Johansson, Reine Wallenberg, Kimberly A. Dick
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
Semiconductor nanowires are promising materials for miniaturized devices, but a thorough understanding of their growth mechanism is necessary for controlled synthesis. Here, the authors use in situ spectroscopy and microscopy to measure the compositi
Externí odkaz:
https://doaj.org/article/4b651132686041acb8cf4c80b635dc12
Autor:
Jonas Johansson, Masoomeh Ghasemi, Sudhakar Sivakumar, Kilian Mergenthaler, Axel R. Persson, Wondwosen Metaferia, Martin H. Magnusson
Publikováno v:
Nanomaterials, Vol 10, Iss 12, p 2524 (2020)
We have previously demonstrated that we can grow p-type GaAs nanowires using Zn doping during gold catalyzed growth with aerotaxy. In this investigation, we show how to calculate the hole concentrations in such nanowires. We base the calculations on
Externí odkaz:
https://doaj.org/article/936a18624f9e44bfa57cda5441f0aeb2
Autor:
David Lindgren, Filip Lenrick, Anders Gustafsson, Axel R. Persson, Lars Samuelson, Rainer Timm, Jovana Colvin, Reine Wallenberg, Maryam Khalilian, Martin Rosén, B. Jonas Ohlsson
Publikováno v:
Nano Select, Vol 3, Iss 2, Pp 471-484 (2022)
To improve the performance and efficiency of Al containing III‐Nitride‐based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the dislocations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22edb8ef4c1fc0c09ba58499352b0cc3
https://doi.org/10.1002/nano.202100154
https://doi.org/10.1002/nano.202100154
Autor:
Alexis Papamichail, Axel R. Persson, Steffen Ricther, Philipp Kuhne, Per O.A. Persson, Mattias Thorsell, Hans Hjelmgren, Niklas Rorsman, Vanya Darakchieva
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe2e0107621ca6bf715cc2b2647899c
https://doi.org/10.1109/csw55288.2022.9930457
https://doi.org/10.1109/csw55288.2022.9930457
Autor:
Lars-Erik Wernersson, Zhongyunshen Zhu, Johannes Svensson, Erik Lind, Axel R. Persson, Elvedin Memisevic, L. R. Wallenberg, Abinaya Krishnaraja
Publikováno v:
ACS Applied Electronic Materials
Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving ste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0dde9fc286d6b32c4bdcbb42dd233745
https://doi.org/10.1021/acsaelm.0c00521
https://doi.org/10.1021/acsaelm.0c00521
Autor:
Johannes Svensson, Reine Wallenberg, Axel R. Persson, Olli-Pekka Kilpi, Markus Hellenbrand, Erik Lind, Lars-Erik Wernersson
Publikováno v:
IEEE Electron Device Letters. 41:1161-1164
Vertical III-V nanowire MOSFETs have demonstrated excellent performance including high transconductance and high ${I}_{\text {on}}$ . One main bottleneck for the vertical MOSFETs is the large access resistance arising from the contacts and ungated re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd6beb88f8da729f73a0ca01629bd2d5
https://doi.org/10.1109/led.2020.3004716
https://doi.org/10.1109/led.2020.3004716
Autor:
Johannes Svensson, Lars-Erik Wernersson, Zhongyunshen Zhu, Axel R. Persson, Reine Wallenberg, Andrei Gromov
Publikováno v:
Nano Research. 13:2517-2524
GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties. Here, we for the first time demonstrate epitaxial G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce06735c86eabacba78a0828fe5c88e2
https://doi.org/10.1007/s12274-020-2889-3
https://doi.org/10.1007/s12274-020-2889-3