Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Axel Feicke"'
Publikováno v:
Photomask Technology 2021.
In this paper, we show the characteristics of particle contamination induced defect footprints and explain the basic principles of their formation during ebeam exposure. To verify these principles, we carried out full 3D Monte Carlo Simulations of el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80a1f6e8775698382da5c967b2d63169
https://doi.org/10.1117/12.2600956
https://doi.org/10.1117/12.2600956
Publikováno v:
SPIE Proceedings.
The long-term development of electronics obliges increasingly tighter specifications for photomasks to meet the requirements of continuing miniaturization. We report on the influence of two different linear drive nozzle types A and B used for conduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::311b8aec1b169770297777c7a60a8f10
https://doi.org/10.1117/12.2240859
https://doi.org/10.1117/12.2240859
Publikováno v:
SPIE Proceedings.
Critical dimensions (CD) measured in resist are key to understanding the CD distribution on photomasks. Vital to this understanding is the separation of spatially random and systematic contributions to the CD distribution. Random contributions will n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5ac33260d8550001ac4df83ea8d436
https://doi.org/10.1117/12.896416
https://doi.org/10.1117/12.896416
Publikováno v:
SPIE Proceedings.
Reticle critical dimension (CD) errors must be minimized in order for photomask manufacturers to meet tight CD uniformity (CDU) requirements. Determining the source of reticle CD errors and reducing or eliminating their CDU contributions are some of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2240e71ffc2f2e2dc024bea742bc4ab3
https://doi.org/10.1117/12.864139
https://doi.org/10.1117/12.864139
Publikováno v:
SPIE Proceedings.
Recently, the design of integrated circuits has become more and more complicated due to higher circuit densities. In particular for logic applications, the design is no longer uniform but combines different kinds of circuits into one mask layout resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::624af21bb3efc258563b73afd615656d
https://doi.org/10.1117/12.617104
https://doi.org/10.1117/12.617104
Publikováno v:
SPIE Proceedings.
An increasingly tighter set of mask specifications requires new equipment, process improvements, and improved e-beam resist materials. Resist profiles, footing behavior and line edge roughness (LER) have strong impacts on CD-uniformity, process bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2c4f8bd0168b2fe44785276cfc2686e
https://doi.org/10.1117/12.617111
https://doi.org/10.1117/12.617111
Autor:
Takahiro Fukai, Rusty Cantrell, Axel Feicke, Shigenori Kamei, Gaston Lee, Martin Tschinkl, Wolfram Porsche, Tatsuhito Kotoda, Harry Asai, Peter Tichy
Publikováno v:
SPIE Proceedings.
A new photomask develop tool designed by Tokyo Electron Limited (TEL) with wafer puddle technology was evaluated at the Advanced Mask Technology Center (AMTC) in Dresden, Germany. Parameters selected for this evaluation were resist dark loss uniformi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac5a9e939955cf146fddf4b2c4c3b551
https://doi.org/10.1117/12.568393
https://doi.org/10.1117/12.568393
Publikováno v:
SPIE Proceedings.
Recently developed positive tone CARs (pCAR) and negative tone CARs (nCAR) have been evaluated for mask making using a 50kV e-beam pattern generator. We determined a screening method considering the most important parameters for example resolution, p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c9d6ffc704d9da9eddc6f8e173f9a9c
https://doi.org/10.1117/12.568819
https://doi.org/10.1117/12.568819
Autor:
Gaston Lee, Wolfram Porsche, Tetsushi Miyamoto, Hideo Funakoshi, Shinji Koga, Yoshiki Okamoto, Shigenori Kamei, Shigemi Oono, Takahiro Fukai, Rusty Cantrell, Hiroshi Asai, Martin Tschinkl, Tatsuhito Kotoda, Axel Feicke, Peter Tichy, Kazuhiro Takeshita
Publikováno v:
SPIE Proceedings.
The challenges, mask manufacturing is faced with, are more and more dominating the semiconductor industry as the pattern sizes shrink. Today's mask patterns have reached sizes that are common in wafer manufacturing. Looking into the industry, we can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aea07948e24d03fa205a2e63281f5b9
https://doi.org/10.1117/12.568820
https://doi.org/10.1117/12.568820
Autor:
James E. Lamb, Lars Voelkel, Alice F. Martin, Francis G. Goodwin, Marlene Strobl, William R. Roberts, Axel Feicke, Sean Trautman, Paul Williams
Publikováno v:
Microlithographic Techniques in Integrated Circuit Fabrication II.
The work outlines a solution to the challenge of integrating a planarizing BARC into the via first dual damascene manufacturing process. We report the initial problems encountered in attempting the planarizing process and the resulting investigation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72a28b51e7fe0a38db2f4a2388cabcab
https://doi.org/10.1117/12.404853
https://doi.org/10.1117/12.404853