Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Avra S. Bandyopadhyay"'
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 782-797 (2020)
Phonon dynamics is explored in mechanically exfoliated two-dimensional WSe2 using temperature-dependent and laser-power-dependent Raman and photoluminescence (PL) spectroscopy. From this analysis, phonon lifetime in the Raman active modes and phonon
Externí odkaz:
https://doaj.org/article/a61e308885fd43dea46d5318c70d1081
Publikováno v:
Emergent Materials. 5:477-487
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71ddd5db956f4a9c97fffeba8392fc69
https://doi.org/10.1007/s42247-022-00383-x
https://doi.org/10.1007/s42247-022-00383-x
Autor:
Anupama B. Kaul, Avra S. Bandyopadhyay
Publikováno v:
The Minerals, Metals & Materials Series ISBN: 9783030923808
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e197caff677bea2ee030557cefcba1c
https://doi.org/10.1007/978-3-030-92381-5_48
https://doi.org/10.1007/978-3-030-92381-5_48
Publikováno v:
Chemistry of Materials. 31:9861-9874
Among the two-dimensional (2D) transitional-metal dichalcogenides, monolayer (1L) tungsten diselenide (WSe2) has recently attracted a great deal of interest because of its direct band gap and tunab...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4944649a37b8a7fde2c3b23680f964f7
https://doi.org/10.1021/acs.chemmater.9b04086
https://doi.org/10.1021/acs.chemmater.9b04086
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXIX.
Transition metal dichalcogenides (TMDCs) have received a great deal of attention from the scientific community since the advent of graphene. Tungsten diselenide (2H-WSe2) has particularly drawn-out attention of researchers because of its broadband sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f72263c214ab1e2925ab7a234b3d797
https://doi.org/10.1117/12.2578915
https://doi.org/10.1117/12.2578915
Publikováno v:
NEMS
Practical device applications of semiconducting two-dimensional (2D) materials based devices rely on their large area growth using Chemical Vapor Deposition (CVD) method. Controlled CVD growth of tungsten diselenide (WSe 2 ) is often challenging beca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f368c65afe4c1708ae43aee6038fd915
https://doi.org/10.1109/nems50311.2020.9265522
https://doi.org/10.1109/nems50311.2020.9265522
Publikováno v:
NEMS
In this work, we fabricated back gated multilayer WSe 2 phototransistor with Au/Ti as electrodes whose electrical properties were investigated over a wide range of temperature T from T = 5.4 to T = 350 K from which several electrical parameters inclu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::752cbe8c32cb41b34c4250f25d0c7579
https://doi.org/10.1109/nems50311.2020.9265572
https://doi.org/10.1109/nems50311.2020.9265572
Autor:
Avra S. Bandyopadhyay, Anupama B. Kaul
Publikováno v:
Journal of Vacuum Science & Technology B. 40:022202
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0a30ed94c4831175aef523b5b637ef3
https://doi.org/10.1116/6.0001371
https://doi.org/10.1116/6.0001371
Publikováno v:
MRS Advances. 2:3721-3726
Two-dimensional (2D) materials are very promising with respect to their integration into optoelectronic devices. Monolayer tungsten diselenide (WSe2) is a direct-gap semiconductor with a bandgap of ~1.6eV, and is therefore a complement to other two-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::265605054a08c844e81c32163129ff36
https://doi.org/10.1557/adv.2017.490
https://doi.org/10.1557/adv.2017.490
Publikováno v:
MRS Advances. 2:3715-3720
Two dimensional (2D) thin transition metal dichalcogenides are being widely investigated for optoelectronics applications. Here, we report on the interfacial study of WSe2 with photo-absorber materials for efficient charge transport using Kelvin Prob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::382d51b2e0e10ff2093dc3f36f6e26d6
https://doi.org/10.1557/adv.2017.410
https://doi.org/10.1557/adv.2017.410