Zobrazeno 1 - 10
of 379
pro vyhledávání: '"Avouris, Ph."'
Autor:
Sundaram, R. S., Engel, M., Lombardo, A., Krupke, R., Ferrari, A. C., Avouris, Ph., Steiner, M.
Publikováno v:
Nano Lett. 13, 1416 (2013)
We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they a
Externí odkaz:
http://arxiv.org/abs/1211.4311
Publikováno v:
Phys. Rev. Lett. 109, 236604 (2012)
Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientat
Externí odkaz:
http://arxiv.org/abs/1211.0559
Publikováno v:
Phys. Rev. B 79, 245430 (2009)
A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure
Externí odkaz:
http://arxiv.org/abs/0902.1479
Autor:
Shaver, J., Crooker, S. A., Fagan, J. A., Hobbie, E. K., Ubrig, N., Portugall, O., Perebeinos, V., Avouris, Ph., Kono, J.
Publikováno v:
Physical Review B 78, 081402(R) (2008)
We have investigated excitons in highly-aligned single-walled carbon nanotubes (SWCNTs) through optical spectroscopy at low temperature (1.5 K) and high magnetic fields ($\textbf{\textit{B}}$) up to 55 T. SWCNT/polyacrylic acid films were stretched,
Externí odkaz:
http://arxiv.org/abs/0802.3203
We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant range (-1.3
Externí odkaz:
http://arxiv.org/abs/cond-mat/0402350
With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off currents an
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308526
We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interio
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306295
While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential inc
Externí odkaz:
http://arxiv.org/abs/cond-mat/0305570
We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide. Experimental mea
Externí odkaz:
http://arxiv.org/abs/cond-mat/0302175
We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calcu
Externí odkaz:
http://arxiv.org/abs/cond-mat/0207397