Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Avi Karsenty"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)
Abstract A new super-resolution method, entitled Near-field Projection Optical Microscopy (NPOM), is presented. This novel technique enables the imaging of nanoscale objects without the need for surface scanning, as is usually required in existing me
Externí odkaz:
https://doaj.org/article/bd2bfb640e1f497da72f3d31a0a4fe8c
Autor:
Binyamin Kusnetz, Jeremy Belhassen, Denis E. Tranca, Stefan G. Stanciu, Stefan-Razvan Anton, Zeev Zalevsky, George A. Stanciu, Avi Karsenty
Publikováno v:
Results in Physics, Vol 56, Iss , Pp 107318- (2024)
A wide palette of nanoscale imaging techniques operating in the near-field regime has been reported to date, enabling an important number of scientific breakthroughs. While the tuning and benchmarking of near-field microscopes represent a very import
Externí odkaz:
https://doaj.org/article/3bef751fc8b343979428f5fdb069420a
Autor:
Avi Karsenty
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 4, Pp 1-19 (2023)
In order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a revolution in silicon photonics communication is necessary. Traditional CMOS, FinFET, and GAAFET downsizing techniques have started to near the physical limi
Externí odkaz:
https://doaj.org/article/96890ade10a247aca58f2ca3cd52cfa9
Publikováno v:
Results in Physics, Vol 48, Iss , Pp 106445- (2023)
Following a comprehensive top-to-bottom review of the four-point probe’s (4PP) system configurations and usages, an original, cross-checking approach of combining analytical, experimental and numerical methods is presented to serve as a simple unif
Externí odkaz:
https://doaj.org/article/3ef2f843154749e69788d54038c917e0
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-20 (2022)
Abstract The functionality of a nanoscale silicon-based optoelectronic modulator is deeply analyzed while it appears that two competing processes, thermal and photonic, are occurring at the same time, and are preventing the optimization of the electr
Externí odkaz:
https://doaj.org/article/a946bf548f204fcdb4c7de6fa8d5f678
Doping modulation of self-induced electric field (SIEF) in asymmetric GaAs/GaAlAs/GaAs quantum wells
Publikováno v:
Results in Physics, Vol 32, Iss , Pp 105093- (2022)
GaAs/GaAlAs/GaAs Asymmetric Quantum Wells (AQW) have shown in the past multiple advantages in the domain of inter-sub-band transition (ISBT) while serving as the basic structures for advanced electro-optical devices. A new approach enables to create
Externí odkaz:
https://doaj.org/article/38e0965edb4542a6bcb214dc825c8659
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-2 (2022)
Externí odkaz:
https://doaj.org/article/bbc37916cd194627897fb8fdf1639840
Autor:
Gilad Hirshfeld, Yehuda Vidal, Yehudit Garcia, Galina Perepelitsa, Avi Karsenty, Yossef Kabessa, Aharon J. Agranat
Publikováno v:
Results in Physics, Vol 23, Iss , Pp 104059- (2021)
The electrooptic effect in potassium lithium tantalate niobate (KLTN) at the paraelectric phase in close proximity to Tc was investigated, and was found to be exceptionally large. At Tc+3°C, the electrically induced change in the refractive index wa
Externí odkaz:
https://doaj.org/article/f22ce12b1f4c4bb3956c02fd8a286c58
Publikováno v:
Nanomaterials, Vol 11, Iss 1, p 237 (2021)
This article, a part of the larger research project of Surface-Enhanced Raman Scattering (SERS), describes an advanced study focusing on the shapes and materials of Tip-Enhanced Raman Scattering (TERS) designated to serve as part of a novel imager de
Externí odkaz:
https://doaj.org/article/a310ee9194b74a96be8accfac03ebfa6
Publikováno v:
Nanomaterials, Vol 11, Iss 1, p 23 (2020)
A nano light emitting device (LED) has been developed and is presented. This new LED, entitled LENS (Light Emitting Nano-pixel Structure), is a new nano-pixel structure designed to enable high-resolution display. It serves as the building block of a
Externí odkaz:
https://doaj.org/article/4d6f707cf66b42668d5641e5f1d562f0