Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Ava Khosravi"'
Autor:
Ava Khosravi, Rafik Addou, Christopher M. Smyth, Ruoyu Yue, Christopher R. Cormier, Jiyoung Kim, Christopher L. Hinkle, Robert M. Wallace
Publikováno v:
APL Materials, Vol 6, Iss 2, Pp 026603-026603-7 (2018)
Covalent p-type doping of WSe2 thin films grown by molecular beam epitaxy and WSe2 exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the
Externí odkaz:
https://doaj.org/article/ab0b8356327c4ebb90973b5dd093df7c
Autor:
Chun-Li Lo, Massimo Catalano, Luhua Wang, Zhihong Chen, Yuanyue Liu, Rafik Addou, Ava Khosravi, Wanying Ge, Robert M. Wallace, Dmitry Zemlyanov, Yujin Ji, Moon J. Kim
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 31(30)
The interconnect half-pitch size will reach ≈20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be >4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a signif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::419623426c2cc0b8da9dc98c42977d38
https://pubmed.ncbi.nlm.nih.gov/31183907
https://pubmed.ncbi.nlm.nih.gov/31183907
Understanding the Impact of Annealing on Interface and Border Traps in the Cr/HfO2/Al2O3/MoS2 System
Autor:
Andrea Padovani, Robert M. Wallace, Paul K. Hurley, Ava Khosravi, Luca Larcher, Pavel Bolshakov, Chadwin D. Young, Peng Zhao, Christopher L. Hinkle
Top-gated, few-layer MoS2 transistors with HfO2 (6 nm)/Al2O3 (3 nm) gate dielectric stacks are fabricated and electrically characterized by capacitance–voltage (C–V) measurements to study electrically active traps (Dit) in the vicinity of the Al2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::024ab5e9b21ef83348049329b039af22
https://hdl.handle.net/11380/1228824
https://hdl.handle.net/11380/1228824
Autor:
Ava Khosravi, Robert M. Wallace, Zhihong Chen, Terry Y. T. Hung, Chin-Sheng Pang, Rafik Addou
Publikováno v:
IEEE Electron Device Letters. :1-1
Direct evidence of O2-plasma induced contact metal Fermi-level realignment is observed in WSe2 based SB field-effect transistors (FETs), leading to high hole currents with on/off ratios >108. The formation of tungsten oxide (WOx) converted from top W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de372076d0e5ee900806aa3098772ef2
https://doi.org/10.1109/led.2020.2999258
https://doi.org/10.1109/led.2020.2999258
Autor:
Rafik Addou, Xinglu Wang, Christopher R. Cormier, Ava Khosravi, Robert M. Wallace, Christopher M. Smyth, Jeffrey Shallenberger
Publikováno v:
Surface Science Spectra. 26:024014
Bismuth selenide (Bi2Se3), a two-dimensional topological insulator material purchased from Alfa Aesar, was analyzed using in situ x-ray photoelectron spectroscopy (XPS). The XPS spectra obtained from a fresh surface exfoliated in ultrahigh vacuum inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4062003344380e82af621775a2901ef
https://doi.org/10.1116/1.5130891
https://doi.org/10.1116/1.5130891
Autor:
Christopher L. Hinkle, Chadwin D. Young, Manuel Quevedo-Lopez, Pavel Bolshakov, Israel Mejia, Ava Khosravi, Rodolfo A. Rodriguez-Davila, Peng Zhao, Robert M. Wallace
Publikováno v:
ICICDT
The influence of the fabrication process on the electrical performance of ZnO and MoS 2 devices are evaluated due to their promise for future internet of things technology applications beyond silicon. Low temperature processing of gate dielectrics in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1256c7f4ef790264dfdb781cc953cd32
https://doi.org/10.1109/icicdt.2018.8399784
https://doi.org/10.1109/icicdt.2018.8399784
Autor:
Chadwin D. Young, Ava Khosravi, Robert M. Wallace, Angelica Azcatl, Pavel Bolshakov, Gioele Mirabelli, Christopher L. Hinkle, Paul K. Hurley, Enrico Caruso, Peng Zhao
Publikováno v:
2D Materials. 5:031002
Border traps and interface traps in HfO2/few-layer MoS2 top-gate stacks are investigated by C-V characterization. Frequency dependent C-V data shows dispersion in both the depletion and accumulation regions for the MoS2 devices.The border trap densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83e4730f368f1eea4f01ca547d6d8553
https://doi.org/10.1088/2053-1583/aab728
https://doi.org/10.1088/2053-1583/aab728
Autor:
Christopher R. Cormier, Rafik Addou, Jiyoung Kim, Ava Khosravi, Christopher M. Smyth, Christopher L. Hinkle, Ruoyu Yue, Robert M. Wallace
Publikováno v:
APL Materials, Vol 6, Iss 2, Pp 026603-026603-7 (2018)
Covalent p-type doping of WSe2 thin films grown by molecular beam epitaxy and WSe2 exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d1bebfdee1213c6630962217814355a
https://doaj.org/article/ab0b8356327c4ebb90973b5dd093df7c
https://doaj.org/article/ab0b8356327c4ebb90973b5dd093df7c
Autor:
Peng Zhao, Robert M. Wallace, Christopher M. Smyth, Christopher L. Hinkle, Pavel Bolshakov, Ava Khosravi, Paul K. Hurley, Chadwin D. Young
Publikováno v:
ECS Meeting Abstracts. :839-839
Transition metal dichalcogenides (TMDs) as 2D or few-layer semiconducting channel material are being widely studied to lower power consumption and obtain negligible short channel effects with continued transistor scaling [1-4]. Meanwhile, research ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50fc3720b6056bb4a1b16604c51a14ef
https://doi.org/10.1149/ma2017-02/14/839
https://doi.org/10.1149/ma2017-02/14/839
Autor:
Peng Zhao, Ava Khosravi, Angelica Azcatl, Pavel Bolshakov, Gioele Mirabelli, Enrico Caruso, Christopher L Hinkle, Paul K Hurley, Robert M Wallace, Chadwin D Young
Publikováno v:
2D Materials; Jul2018, Vol. 5 Issue 3, p1-1, 1p