Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Avşar, Ahmet"'
Autor:
Glushkov, Evgenii, Macha, Michal, Rath, Esther, Navikas, Vytautas, Ronceray, Nathan, Cheon, Cheol Yeon, Aqeel, Ahmed, Avsar, Ahmet, Watanabe, Kenji, Taniguchi, Takashi, Shorubalko, Ivan, Kis, Andras, Fantner, Georg, Radenovic, Aleksandra
Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control
Externí odkaz:
http://arxiv.org/abs/2107.02254
Autor:
Comtet, Jean, Grosjean, Benoit, Glushkov, Evgenii, Avsar, Ahmet, Watanabe, Kenji, Taniguchi, Takashi, Vuilleumier, Rodolphe, Bocquet, Marie-Laure, Radenovic, Aleksandra
Aqueous proton transport at interfaces is ubiquitous and crucial for a number of fields, ranging from cellular transport and signaling, to catalysis and membrane science. However, due to their light mass, small size and high chemical reactivity, unco
Externí odkaz:
http://arxiv.org/abs/1906.09019
Autor:
Ciarrocchi, Alberto, Unuchek, Dmitrii, Avsar, Ahmet, Watanabe, Kenji, Taniguchi, Takashi, Kis, Andras
Publikováno v:
Nature Photonics 13, 131-136 (2019)
Long-lived interlayer excitons with distinct spin-valley physics in van der Waals heterostructures based on transition metal dichalcogenides make them promising for information processing in next-generation devices. While the emission characteristics
Externí odkaz:
http://arxiv.org/abs/1803.06405
Autor:
Avsar, Ahmet, Tan, Jun Y., Xin, Luo, Khoo, Khoong Hong, Yeo, Yuting, Watanabe, Kenji, Taniguchi, Takashi, Quek, Su Ying, Ozyilmaz, Barbaros
Publikováno v:
Nano Letters, August 9, 2017
Due to the chemical inertness of 2D hexagonal-Boron Nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such as Black Phosphorus (BP). However, the effects of h-BN on Schottky barrier height, doping and contac
Externí odkaz:
http://arxiv.org/abs/1708.05162
Autor:
Avsar, Ahmet, Tan, Jun You, Kurpas, Marcin, Gmitra, Martin, Watanabe, Kenji, Taniguchi, Takashi, Fabian, Jaroslav, Ozyilmaz, Barbaros
Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for spin communication due to its extraordinary electron mobility, the la
Externí odkaz:
http://arxiv.org/abs/1706.02076
Autor:
Avsar, Ahmet, Unuchek, Dmitrii, Liu, Jiawei, Sanchez, Oriol Lopez, Watanabe, Kenji, Taniguchi, Takashi, Ozyilmaz, Barbaros, Kis, Andras
Publikováno v:
ACS Nano, 2017
The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin inje
Externí odkaz:
http://arxiv.org/abs/1705.10267
Autor:
Avsar, Ahmet, Vera-Marun, Ivan Jesus, Tan, Jun You, Koon, Gavin Kok Wai, Watanabe, Kenji, Taniguchi, Takashi, Adam, Shaffique, Ozyilmaz, Barbaros
Publikováno v:
NPG Asia Materials 8, e274 (Mar 2016)
The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in
Externí odkaz:
http://arxiv.org/abs/1602.07817
Publikováno v:
2D Mater.2, 044009, 2015
The preservation and manipulation of a spin state mainly depends on the strength of the spin-orbit interaction. For pristine graphene, the intrinsic spin-orbit coupling (SOC) is only in the order of few ueV, which makes it almost impossible to be use
Externí odkaz:
http://arxiv.org/abs/1512.00642
Akademický článek
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Autor:
Avsar, Ahmet, Vera-Marun, Ivan J., You, Tan Jun, Watanabe, Kenji, Taniguchi, Takashi, Neto, Antonio Helio Castro, Ozyilmaz, Barbaros
The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated
Externí odkaz:
http://arxiv.org/abs/1412.1191