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Autor:
Austin Shallcross, Krishnamurthy Mahalingam, Eunsung Shin, Guru Subramanyam, Md Shahanur Alam, Tarek Taha, Sabyasachi Ganguli, Cynthia Bowers, Benson Athey, Albert Hilton, Ajit Roy, Rohan Dhall
Publikováno v:
Frontiers in Electronics, Vol 3 (2022)
Memristor devices fabricated using the chalcogenide Ge2Te3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-s
Externí odkaz:
https://doaj.org/article/bd5535c3466548ef93c3e09f21856204
