Výsledky vyhledávání - "Austin M. Cano"

Spontaneous etching of B2O3by HF gas studied using infrared spectroscopy, mass spectrometry, and density functional theory

Autor: Austin M. Cano, Suresh Kondati Natarajan, Jonathan L. Partridge, Simon D. Elliott, Steven M. George

Funding Information: The FTIR studies were funded by Intel through a member specific research grant through the Semiconductor Research Corporation (SRC). Support for the new QMS reactor and the QMS investigations was provided by Lam Research. S.K.N.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03145bdf4a40e03db33adf0630f4230c
https://aaltodoc.aalto.fi/handle/123456789/113898

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Thermal atomic layer etching of VO2 using sequential BCl3 and SF4 exposures: Observation of conversion, ligand-exchange, and oxidation state changes

Autor: Jonas C. Gertsch, Jonathan L. Partridge, Austin M. Cano, Joel W. Clancey, Victor M. Bright, Steven M. George

Publikováno v: Journal of Vacuum Science & Technology A. 41:012603

The thermal atomic layer etching (ALE) of VO2 was demonstrated using sequential exposures of BCl3 and SF4. The VO2 etch rate measured by quartz crystal microbalance investigations at 250 °C was 2.3 Å/cycle. The mass losses during individual BCl3 an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19987ba7c89e87500f23738a7583c9a3
https://doi.org/10.1116/6.0002149

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SF4 as the Fluorination Reactant for Al2O3 and VO2 Thermal Atomic Layer Etching

Autor: Victor M. Bright, Austin M. Cano, Jonas C. Gertsch, Steven M. George

Publikováno v: Chemistry of Materials. 31:3624-3635

Thermal atomic layer etching (ALE) is an important technique for the precise isotropic etching of nanostructures. Thermal ALE of many materials can be achieved using a two-step fluorination and lig...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8f840a2015695011e9f9e65392bed9ea
https://doi.org/10.1021/acs.chemmater.8b05294

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Effect of HF Pressure on Thermal Al2O3 Atomic Layer Etch Rates and Al2O3 Fluorination

Autor: Jaime W. DuMont, Steven M. George, Amy Elizabeth Marquardt, Austin M. Cano

Publikováno v: The Journal of Physical Chemistry C. 123:10346-10355

Thermal Al2O3 atomic layer etching (ALE) can be accomplished using sequential fluorination and ligand-exchange reactions. HF can be employed as the fluorination reactant, and Al(CH3)3 can be utilized as the metal precursor for ligand exchange. This s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5443355475cf1181432f9f579b3129c4
https://doi.org/10.1021/acs.jpcc.9b00124

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Thermal Atomic Layer Etching of SiO2 by a 'Conversion-Etch' Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride

Autor: Amy Elizabeth Marquardt, Austin M. Cano, Jaime W. DuMont, Steven M. George

Publikováno v: ACS Applied Materials & Interfaces. 9:10296-10307

The thermal atomic layer etching (ALE) of SiO2 was performed using sequential reactions of trimethylaluminum (TMA) and hydrogen fluoride (HF) at 300 °C. Ex situ X-ray reflectivity (XRR) measurements revealed that the etch rate during SiO2 ALE was de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6aade92f20881ebc7a29c3f968a20695
https://doi.org/10.1021/acsami.7b01259

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Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al2O3 by trimethylaluminum

Autor: Tyler J. Myers, Steven M. George, Diane K. Lancaster, Joel W. Clancey, Austin M. Cano

Publikováno v: Journal of Vacuum Science & Technology A. 39:021001

Atomic layer processing such as atomic layer deposition (ALD) and thermal atomic layer etching (ALE) is usually described in terms of sequential, self-limiting surface reactions. This picture for ALD and thermal ALE leaves out the possibility that th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8518d72b0e2a9556fc00ed414c1d1fa
https://doi.org/10.1116/6.0000680

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