Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Aurelie Thuaire"'
Autor:
Christophe Brun, Xavier Baillin, Aurelie Thuaire, Delphine Sordes, Corentin Carmignani, Emmanuel Rolland, Patrick Reynaud, Severine Cheramy, Gilles Poupon
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 6:1804-1814
With their attractive intrinsic properties, such as morphology, autoassembling properties, and tailorability, nano-objects could provide alternative and innovative routes to current microelectronics and nanoelectronics. Further insight on their elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3b3fe19c53d4976bff9b606d3a450b3
https://doi.org/10.1109/tcpmt.2016.2633420
https://doi.org/10.1109/tcpmt.2016.2633420
Autor:
Cedrick Chappaz, T. Frank, F. Lorut, Gilles Poupon, Lucile Arnaud, Lorena Anghel, P. Leduc, Stephane Moreau, Aurelie Thuaire, E. Chery
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2013, 53 (1), pp.17-29. ⟨10.1016/j.microrel.2012.06.021⟩
Microelectronics Reliability, Elsevier, 2013, 53 (1), pp.17-29. ⟨10.1016/j.microrel.2012.06.021⟩
Microelectronics Reliability, 2013, 53 (1), pp.17-29. ⟨10.1016/j.microrel.2012.06.021⟩
Microelectronics Reliability, Elsevier, 2013, 53 (1), pp.17-29. ⟨10.1016/j.microrel.2012.06.021⟩
International audience; In this paper, reliability of Through Silicon via (TSV) interconnects is analyzed for two technologies. First part presents an exhaustive analysis of Cu TSV-last approach of 2 μm diameter and 15 μm of depth. Thermal cycling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f698ff343b6c8957e4ed47c8509a0371
https://doi.org/10.1016/j.microrel.2012.06.021
https://doi.org/10.1016/j.microrel.2012.06.021
Publikováno v:
Materials Science Forum. :397-400
The photoluminescence (PL) of the UD-4 defect is observed in semi-insulating bulk 4H, 6H and 15R SiC. In 4H and 6H SiC the UD-4 defect consists of two families of no-phonon (NP) lines, Ua and Ub, and in 15R SiC it consists of three families, Ua, Ub a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e191088c994a1ef61182bbb04e5d2f
https://doi.org/10.4028/www.scientific.net/msf.600-603.397
https://doi.org/10.4028/www.scientific.net/msf.600-603.397
Autor:
Konstantinos Zekentes, Francis Baillet, Edwige Bano, Alexandre Crisci, Michel Mermoux, Aurelie Thuaire
Publikováno v:
Mat. Sci. Forum
Mat. Sci. Forum, 2007, 556-557, pp.909-912
Material Science Forum
European Conference on Silicon Carbide and Related Materials
European Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912
HAL
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2007, 556-557, pp. 909-912. ⟨10.4028/3-908453-69-0.909⟩
Mat. Sci. Forum, 2007, 556-557, pp.909-912
Material Science Forum
European Conference on Silicon Carbide and Related Materials
European Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912
HAL
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2007, 556-557, pp. 909-912. ⟨10.4028/3-908453-69-0.909⟩
International audience; Raman spectroscopy and photoemission microscopy were coupled as two complementary non-destructive optical techniques in order to study biased 4H-SiC pin diodes. These two characterization tools have been largely used for the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ecd9d3351c4b2cefebfe8d0be5702a3
https://doi.org/10.4028/www.scientific.net/msf.556-557.909
https://doi.org/10.4028/www.scientific.net/msf.556-557.909
Autor:
Peter J. Wellmann, Alexandre Crisci, Laurent Auvray, Michel Mermoux, Michel Pons, Ralf R. Muller, Aurelie Thuaire
Publikováno v:
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2005, 483?485, pp. 393-396. ⟨10.4028/0-87849-963-6.393⟩
Materials Science Forum, Trans Tech Publications Inc., 2005, 483?485, pp. 393-396. ⟨10.4028/0-87849-963-6.393⟩
We have studied the application of optical techniques for the determination of the spatial distribution of electronic properties of highly aluminum doped p-type SiC wafers. Absorption and birefringence mapping are known to be sensitive characterizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89627d7643b2476464eae7744e268f84
https://doi.org/10.4028/www.scientific.net/msf.483-485.393
https://doi.org/10.4028/www.scientific.net/msf.483-485.393
Publikováno v:
Materials Science Forum. :773-776
The defects were investigated in p+nn+ 4H-SiC diodes by observing the forward-biasinduced light emission through the substrate. The spatial intensity distribution, the temporal evolution and the spectral content of the electroluminescence (EL) signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7c6deffba9eee696c95aee8cb17df6b
https://doi.org/10.4028/www.scientific.net/msf.483-485.773
https://doi.org/10.4028/www.scientific.net/msf.483-485.773
Publikováno v:
physica status solidi (a). 202:660-664
The defects were investigated in p+nn+ 4H-SiC diodes by observing the forward-biasinduced light emission through the substrate. The spatial intensity distribution, the temporal evolution and the spectral content of the electroluminescence (EL) signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eef961adf1fdfd4861f8de3be96e8000
https://doi.org/10.1002/pssa.200460469
https://doi.org/10.1002/pssa.200460469
Autor:
Stephane Moreau, Aurelie Thuaire, Lucile Arnaud, Lorena Anghel, P. Leduc, T. Frank, Cedrick Chappaz
Publikováno v:
62nd Electronic Components and Technology Conference (ECTC'12)
62nd Electronic Components and Technology Conference (ECTC'12), May 2012, San Diego, CA, United States. pp.326-330
62nd Electronic Components and Technology Conference (ECTC'12), May 2012, San Diego, CA, United States. pp.326-330
International audience; The electromigration (EM) behavior of Through Silicon Via (TSV) interconnects used for 3D integration is studied. Impact of the TSV section size on EM lifetime and consideration of increasing metal level thickness are reported
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c9b3cdfbbd4e29eb9c1867d186cda5f
https://hal.archives-ouvertes.fr/hal-01408775
https://hal.archives-ouvertes.fr/hal-01408775
Autor:
T. Frank, Stephane Moreau, F. Lorut, P. Leduc, Lorena Anghel, R. El Farhane, Aurelie Thuaire, Lucile Arnaud, Cedrick Chappaz
Publikováno v:
Proc of IEEE International Reliability Physics Symposium (IRPS'11)
IEEE International Reliability Physics Symposium (IRPS'11), Monterey, CA, USA, April 10-14
IEEE International Reliability Physics Symposium (IRPS'11), Monterey, CA, USA, April 10-14, Apr 2011, Monterey, ca., United States. pp.3F.4.1-3F.4.6, ⟨10.1109/IRPS.2011.5784499⟩
IEEE International Reliability Physics Symposium (IRPS'11), Monterey, CA, USA, April 10-14
IEEE International Reliability Physics Symposium (IRPS'11), Monterey, CA, USA, April 10-14, Apr 2011, Monterey, ca., United States. pp.3F.4.1-3F.4.6, ⟨10.1109/IRPS.2011.5784499⟩
ISBN 978-1-4244-9111-7; International audience; 3D-IC integration using Through Silicon Via (TSV) is becoming an alternative to overcome obstacles of CMOS scaling. As TSV processes reach maturity, reliability investigation becomes critical. To the be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5cfa84aa873a0a96b0a85aa1a3e60f8
https://hal.archives-ouvertes.fr/hal-00599391
https://hal.archives-ouvertes.fr/hal-00599391
Autor:
P. Leduc, Lucile Arnaud, T. Frank, Stephane Moreau, Rebha El Farhane, Aurelie Thuaire, Cedrick Chappaz, Lorena Anghel
Publikováno v:
Proc. of 12th Electronics Packaging Technology Conference (EPTC'10)
12th Electronics Packaging Technology Conference (EPTC'10)
12th Electronics Packaging Technology Conference (EPTC'10), Dec 2010, Singapore, Singapore. pp.321-324, ⟨10.1109/EPTC.2010.5702655⟩
12th Electronics Packaging Technology Conference (EPTC'10)
12th Electronics Packaging Technology Conference (EPTC'10), Dec 2010, Singapore, Singapore. pp.321-324, ⟨10.1109/EPTC.2010.5702655⟩
ISBN 978-1-4244-8561-1; International audience; This paper focuses on the link between initial electrical resistance of Through Silicon Via (TSV), and possible failure occurring during Thermal Cycling Test (TCT) and electromigration (EM) tests. Physi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f328cb8b01fc526baca1ee2c064faa7
https://hal.archives-ouvertes.fr/hal-00599560
https://hal.archives-ouvertes.fr/hal-00599560