Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Aurélien Maréchal"'
Autor:
Nicolas Rouger, Aurélien Maréchal
Publikováno v:
Energies, Vol 12, Iss 12, p 2387 (2019)
Owing to its outstanding electro-thermal properties, such as the highest thermal conductivity (22 W/(cm∙K) at room temperature), high hole mobility (2000 cm2/(V∙s)), high critical electric field (10 MV/cm) and large band gap (5.5 eV), diamond rep
Externí odkaz:
https://doaj.org/article/16da172b7565443cbfe0088144fbee88
Publikováno v:
Active and Passive Electronic Components, Vol 2016 (2016)
Externí odkaz:
https://doaj.org/article/9789e221e40e43f4bd8b86e760079d6b
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2020, 111, pp.108185. ⟨10.1016/j.diamond.2020.108185⟩
Diamond and Related Materials, Elsevier, 2020, 111, pp.108185. ⟨10.1016/j.diamond.2020.108185⟩
International audience; We report the 250 • C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with a 400 nm p-type channel with a boron doping of [N AN D ]= 2.3×10 17 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7feb50d6d8de296ed5e909e3bed67e99
https://hal.archives-ouvertes.fr/hal-03017013
https://hal.archives-ouvertes.fr/hal-03017013
Autor:
Aurélien Maréchal, Nicolas Rouger
Publikováno v:
Energies, Vol 12, Iss 12, p 2387 (2019)
Energies
Volume 12
Issue 12
Energies, MDPI, 2019, 12 (12), pp.2387. ⟨10.3390/en12122387⟩
Energies
Volume 12
Issue 12
Energies, MDPI, 2019, 12 (12), pp.2387. ⟨10.3390/en12122387⟩
International audience; Owing to its outstanding electro-thermal properties, such as the highest thermal conductivity (22 W/(cm·K) at room temperature), high hole mobility (2000 cm 2 /(V·s)), high critical electric field (10 MV/cm) and large band g
Autor:
Pierre Lefranc, Pierre-Olivier Jeannin, Aurélien Maréchal, Gauthier Chicot, David Eon, Nicolas Rouger, Gaetan Perez
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, 2020, 110, pp.108154. ⟨10.1016/j.diamond.2020.108154⟩
Diamond and Related Materials, Elsevier, 2020, 110, pp.108154. ⟨10.1016/j.diamond.2020.108154⟩
Diamond and Related Materials, 2020, 110, pp.108154. ⟨10.1016/j.diamond.2020.108154⟩
Diamond and Related Materials, Elsevier, 2020, 110, pp.108154. ⟨10.1016/j.diamond.2020.108154⟩
International audience; This paper proposes a system-level comparison between diamond and SiC power devices. It highlights the benefits of diamond semiconductors for power electronics applications. Actual diamond power devices are fabricated and char
Autor:
David Eon, Gaetan Perez, Nicolas Rouger, Juliette Letellier, Pierre-Olivier Jeannin, Gauthier Chicot, Aurélien Maréchal, Jean-Luc Schanen
Publikováno v:
ECCE 2018
ECCE 2018, Sep 2018, Portland, United States
HAL
ECCE 2018, Sep 2018, Portland, United States
HAL
International audience; This paper presents the integration of diamondSchotkky barrier diodes (SBDs) for power electronics applicationsand the problematics linked to their implementation inpower converters. Various approches are considered for increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fc0dbaba9504f8e596a1cca071a4c9d
https://hal.archives-ouvertes.fr/hal-01885530
https://hal.archives-ouvertes.fr/hal-01885530
Autor:
Thanh-Toan Pham, Nicolas Rouger, Etienne Gheeraert, Aurélien Maréchal, Julien Pernot, Pierre Muret, David Eon
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161523. ⟨10.1063/1.4996114⟩
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161523. ⟨10.1063/1.4996114⟩
Metal oxide semiconductor capacitors were fabricated using p-type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and ca
Autor:
Aurélien Maréchal, Nicolas Rouger, Daniel Araujo, Marina Gutierrez, Fernando Lloret, Thanh-Toan Pham, Julien Pernot, Jose Carlos Piñero, Etienne Gheeraert, David Eon
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (5), pp.1830-1837. ⟨10.1109/TED.2018.2813084⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (5), pp.1830-1837. ⟨10.1109/TED.2018.2813084⟩
In this paper, we introduce a set of experiments and analyses to comprehensively correlate the epitaxial structural defects and electrical characteristics in the pseudovertical homoepitaxial boron-doped oxygen-terminated (001) diamond metal–oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dedd77e9f2b166f1558b602a59827b54
https://hal.archives-ouvertes.fr/hal-01757885
https://hal.archives-ouvertes.fr/hal-01757885
Autor:
Gaetan Perez, Jacques Letellier, Aurélien Maréchal, Pierre-Olivier Jeannin, Pierre Lefranc, Eon, D., Nicolas Rouger
Publikováno v:
MRS 2017 Fall Meeting
MRS 2017 Fall Meeting, Nov 2017, Boston, United States
HAL
MRS 2017 Fall Meeting, Nov 2017, Boston, United States
HAL
International audience; Since several years, the power electronics community shows a growing interest for wide band gap semiconductors to design power converters with higher performances. Considering the wide band gap materials physical properties (S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f55862274b3799dbc9edbba952946d91
https://hal.archives-ouvertes.fr/hal-01655900
https://hal.archives-ouvertes.fr/hal-01655900
Autor:
Pierre Muret, David Eon, Julien Pernot, Etienne Gheeraert, Aurélien Maréchal, Aboulaye Traore
Publikováno v:
physica status solidi (a). 212:2501-2506
Heterostructures such as Schottky diodes and metal/oxide/semiconductor structures are the building blocks of diamond electronic devices. They are able to carry large current densities, up to several kA/cm$^2$, if a heavily boron doped layer (p$^{++}$