Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Aurélie Fauveau"'
Autor:
Sandrine Therias, Manuel Hidalgo, Stéphane Cros, Jean-Luc Gardette, Patrick Boldrighini, Aurélie Fauveau
Publikováno v:
Review of Scientific Instruments
Review of Scientific Instruments, 2019, 90 (1), ⟨10.1063/1.5021182⟩
Review of Scientific Instruments, American Institute of Physics, 2019, 90 (1), ⟨10.1063/1.5021182⟩
Review of Scientific Instruments, American Institute of Physics, 2019, 90 (1), pp.014710. ⟨10.1063/1.5021182⟩
Review of Scientific Instruments, 2019, 90 (1), ⟨10.1063/1.5021182⟩
Review of Scientific Instruments, American Institute of Physics, 2019, 90 (1), ⟨10.1063/1.5021182⟩
Review of Scientific Instruments, American Institute of Physics, 2019, 90 (1), pp.014710. ⟨10.1063/1.5021182⟩
International audience; Organic photovoltaic (OPV) devices and other organic electronics have the promise to provide lightweight, flexible alternatives to traditional rigid semiconductor technologies. However, organic electronics often degrade rapidl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c94f6d92201986e5d4b08428a3d9fd8
https://uca.hal.science/hal-03022935/document
https://uca.hal.science/hal-03022935/document
Autor:
F. Ducroquet, Sébastien Dubois, Jordi Veirman, Benoit Martel, Anne Kaminski-Cachopo, Aurélie Fauveau
Publikováno v:
6th International Conference on Crystalline Silicon Photovoltaics-nPV workshop
6th International Conference on Crystalline Silicon Photovoltaics-nPV workshop, Mar 2016, Chambéry, France
Energy Procedia
Energy Procedia, 2016, 92, pp.691-696. ⟨10.1016/j.egypro.2016.07.045⟩
Energy Procedia, Elsevier, 2016, 92, pp.691-696. ⟨10.1016/j.egypro.2016.07.045⟩
6th International Conference on Crystalline Silicon Photovoltaics-nPV workshop, Mar 2016, Chambéry, France
Energy Procedia
Energy Procedia, 2016, 92, pp.691-696. ⟨10.1016/j.egypro.2016.07.045⟩
Energy Procedia, Elsevier, 2016, 92, pp.691-696. ⟨10.1016/j.egypro.2016.07.045⟩
International audience; Nowadays, compensated silicon (Si) is used in photovoltaic (PV) processes, whether it is through intentional co-doping of resistivity-adjusted Czochralski ingots for high efficiency n-type Si solar cells, as a result of altern
Autor:
Sébastien Dubois, Benoit Martel, F. Ducroquet, Anne Kaminski-Cachopo, Jordi Veirman, Aurélie Fauveau
Publikováno v:
physica status solidi (c)
physica status solidi (c), Wiley, 2016, 13 (10-12), pp.776-781. ⟨10.1002/pssc.201600048⟩
physica status solidi (c), 2016, 13 (10-12), pp.776-781. ⟨10.1002/pssc.201600048⟩
physica status solidi (c), Wiley, 2016, 13 (10-12), pp.776-781. ⟨10.1002/pssc.201600048⟩
physica status solidi (c), 2016, 13 (10-12), pp.776-781. ⟨10.1002/pssc.201600048⟩
International audience; This work explores the possibility to use the mechanism of hopping conduction – and particularly the transition temperature between band and hopping conduction – on low temperature resistivity measurements, for the control