Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Augustin J. Hong"'
Publikováno v:
Advanced Materials. 24:1899-1902
The viability of single-walled carbon nanotubes (SWCNTs) as a transparent conducting electrode on a-Si:H based single junction solar cells was explored. A Schottky barrier formed at a SWCNT/a-Si:H interface was removed by introducing high work functi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64897d815a3e25f57e5ed7b29ad12250
https://doi.org/10.1002/adma.201104677
https://doi.org/10.1002/adma.201104677
Publikováno v:
Journal of Microelectromechanical Systems. 21:235-242
This paper presents a microscale resonant sensor that has been fabricated with nanoscale pores for enhanced sensitivity to chemical vapors. By building resonators that are made of porous silicon, we take advantage of the increased area for molecular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d123494143ffbdafc01e7aac1353266
https://doi.org/10.1109/jmems.2011.2170819
https://doi.org/10.1109/jmems.2011.2170819
Autor:
Emil B. Song, Kang L. Wang, Bruce H. Weiller, Yong Wang, Matthew J. Allen, Jonathan K. Wassei, Young-Ju Park, Jin Zou, Jesse D. Fowler, Jiyoung Kim, Hyung Suk Yu, Richard B. Kaner, Augustin J. Hong
Publikováno v:
ACS Nano. 5:7812-7817
Graphene's single atomic layer of sp(2) carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM). GFM has the potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a76158eb65365c8a4ab20a6667a64391
https://doi.org/10.1021/nn201809k
https://doi.org/10.1021/nn201809k
Autor:
Chi-Chun Liu, Augustin J. Hong, Jin Zou, Faxian Xiu, Yong Wang, Kang L. Wang, Shengxiang Ji, Jiyoung Kim, Paul F. Nealey
Publikováno v:
Nano Letters. 10:224-229
As information technology demands for larger capability in data storage continue, ultrahigh bit density memory devices have been extensively investigated. To produce an ultrahigh bit density memory device, multilevel cell operations that require seve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a5455cca197b5f95f89a7d832f1156d
https://doi.org/10.1021/nl903340a
https://doi.org/10.1021/nl903340a
Autor:
Robin Chao, Judson R. Holt, Augustin J. Hong, David Conklin, Anita Madan, Todd Bailey, Kriti Kohli, Yunlin Zhang, G. Raja Muthinti
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Integrated circuits from 22nm node and beyond utilize many innovative techniques to achieve features that are well beyond the resolution limit of 193nm immersion lithography. The introduction of complex 3D structures in device design presents additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe9ba453ce1b029374aa9c4591ac00ae
https://doi.org/10.1117/12.2057402
https://doi.org/10.1117/12.2057402
Autor:
Devendra K. Sadana, Corsin Battaglia, Christophe Ballif, Jeehwan Kim, Woo-Shik Jung, Mathieu Charrière, Hongsik Park, Augustin J. Hong
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 26(24)
High aspect-ratio three-dimensional (3D) a-Si:H solar cells have been fabricated to enhance a light absorption path while maintaining a short carrier collection length. Substantial efficiency enhancement in 3D solar cells was achieved due to the boos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::637a0befccb6380ae9d248ae9c7ee7ce
https://pubmed.ncbi.nlm.nih.gov/24648188
https://pubmed.ncbi.nlm.nih.gov/24648188
Autor:
Jeehwan Kim, Frances M. Ross, Byungha Shin, Jae-Woong Nah, Augustin J. Hong, Devendra K. Sadana
Publikováno v:
ACS nano. 6(1)
We introduce a cost-effective method of forming size-tunable arrays of nanocones to act as a three-dimensional (3D) substrate for hydrogenated amorphous silicon (a-Si:H) solar cells. The method is based on self-assembled tin nanospheres with sizes in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea2f74d6665d70227e5606c07305537e
https://pubmed.ncbi.nlm.nih.gov/22148324
https://pubmed.ncbi.nlm.nih.gov/22148324
Autor:
Kyeong-Sik Shin, Kang L. Wang, Sung-min Kim, Joo Tae Moon, Yongha Hwang, Jiyoung Kim, Rob N. Candler, Faxian Xiu, Kosmas Galatsis, Chi On Chui, Augustin J. Hong, Emil B. Song, Si-Young Choi
Publikováno v:
Nanotechnology. 22(25)
We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b6b949f79f08e7314d025e6ee1ba6d2
https://pubmed.ncbi.nlm.nih.gov/21572190
https://pubmed.ncbi.nlm.nih.gov/21572190
Autor:
Jiyoung Kim, Augustin J. Hong, K.L. Wang, Alexander Khitun, Ajey Poovannummoottil Jacob, Mingqiang Bao
Publikováno v:
2008 Device Research Conference.
The authors analyze the performance and estimate the efficiency of the spin-wave based logic devices. The main potential advantage of using spin wave for information transmission and processing is that a bit of information can be transmitted without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e798c596049b51f227cad23e43d7a2f
https://doi.org/10.1109/drc.2008.4800783
https://doi.org/10.1109/drc.2008.4800783
Autor:
K.L. Wang, Emil B. Song, Jeong-hee Han, U-In Chung, Siguang Ma, You-Sheng Lin, Augustin J. Hong, M. Ogawa, Jiyoung Kim
Publikováno v:
2008 Symposium on VLSI Technology.
A 3-D flash memory cell of VRAT (vertical-recess-array-transistor) has been fabricated using a unique and simple 3-D integration method of PIPE (planarized integration on the same plane), which allows for the successful implementation of ultra high d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bab798fb9cd2cc0f68cd6a35680ad65a
https://doi.org/10.1109/vlsit.2008.4588587
https://doi.org/10.1109/vlsit.2008.4588587