Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Augustin Cathignol"'
Autor:
Armelle Kapferer, F. Boulard, Delphine Brellier, Diane Sam-giao, Laurent Rubaldo, V. Destefanis, Olivier Gravrand, A. Kerlain, P. Fougères, L. Dargent, Alexandre Brunner, Augustin Cathignol, Pierre Guinedor, Valery Compain
Publikováno v:
Infrared Technology and Applications XLIV.
SOFRADIR is the worldwide leader on the cooled IR detector market for high-performance space, military and security applications thanks to a well mastered Mercury Cadmium Telluride (MCT) technology, and recently thanks to the acquisition of III-V tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1c5edb3c79683e5051468f3ec767392
https://doi.org/10.1117/12.2307344
https://doi.org/10.1117/12.2307344
Autor:
Armelle Kapferer, S. Giraud, C. Roman-Tinnes, S. Chabanet, Alexandre Brunner, V. Destefanis, P. Fougères, Yann Reibel, M. C. Manzato, E. Gout, D. Brellier, Laurent Rubaldo, Y. Loreau, Augustin Cathignol
Publikováno v:
Infrared Technology and Applications XLIV.
High-performance infrared detectors based on HgCdTe technology require high quality epilayers, for which bulk CdZnTe is considered as the ideal substrate, thanks to its ability to perfectly match its lattice constant. Reaching very high crystal quali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4162f15016e50e61f46d9fbfe0a997a
https://doi.org/10.1117/12.2304950
https://doi.org/10.1117/12.2304950
Autor:
A. Kerlain, P. Fougères, Augustin Cathignol, V. Destefanis, F. Boulard, Alexandre Brunner, L. Dargent, Delphine Brellier, Olivier Gravrand, Diane Sam-giao, Valery Compain, Armelle Kapferer, Laurent Rubaldo, Pierre Guinedor
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XV.
SOFRADIR is the worldwide leader on the cooled IR detector market for high-performance space, military and security applications thanks to a well mastered Mercury Cadmium Telluride (MCT) technology, and recently thanks to the acquisition of III-V tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b2381240e92217acbbf2db17e8886a
https://doi.org/10.1117/12.2300392
https://doi.org/10.1117/12.2300392
Publikováno v:
Solid-State Electronics. :163-169
In this work, the drain-current mismatch is characterized from linear to the saturation regime. Characterizations are performed for N-MOS transistors with and without pocket-implants. A general drain-current mismatch model for transistors without poc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fba7a95e8abb0822d808d294345b3cc4
https://doi.org/10.1016/j.sse.2011.06.040
https://doi.org/10.1016/j.sse.2011.06.040
Publikováno v:
IEEE Transactions on Electron Devices. 58:2235-2248
This paper aims at reviewing the results that we have obtained during the last ten years in the characterization and modeling of transistor mismatch in advanced complementary metal-oxide-semiconductor (CMOS) technologies. First, we review the theoret
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::202c7b327db4d49b4699b1f38948ace2
https://doi.org/10.1109/ted.2011.2141140
https://doi.org/10.1109/ted.2011.2141140
Publikováno v:
Solid-State Electronics. 54:1359-1366
Modeling local electrical fluctuations on pocket transistor is a challenging task, especially for relatively long gate transistors. Previous work highlighted and qualitatively explain the anomalously high random dopant induced increase of local fluct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e96d7a063c84fd449dd4d1f18707e4f2
https://doi.org/10.1016/j.sse.2010.06.010
https://doi.org/10.1016/j.sse.2010.06.010
RMS noise modeling and detection for high-reliability HgCdTe infrared focal plane arrays development
Autor:
G. Vauquelin, Augustin Cathignol, Alexandre Brunner, V. Destefanis, Laurent Rubaldo, M. Runtz, Magalie Maillard
Publikováno v:
SPIE Proceedings.
This paper presents recent improvements introduced in production lines of Mid-Wavelength Infra-Red (MWIR) and Long-Wavelength Infra-Red (LWIR) HgCdTe detectors that increase performances, image quality, and reliability. This was achieved thanks to ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83eb977444b59fb680adf97b453b9cc0
https://doi.org/10.1117/12.2178034
https://doi.org/10.1117/12.2178034
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
Pocket architecture is a useful technique to eliminate short channel effects to provide smaller transistors sizes. However, it has been shown that it has an important drawback on mismatch. In this paper, the drain-current mismatch σ(ΔId/Id) is char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a46ef736c882bd9a8d234a0d44109155
https://doi.org/10.1109/essderc.2010.5618468
https://doi.org/10.1109/essderc.2010.5618468
Publikováno v:
IEEE Transactions on Electron Devices. 58:1255-1256
This correspondence briefly describes and reconciles two separate streams of work, which extend the Pelgrom model for a transistor mismatch. While independently conceived and pursued, similar and complementary conclusions have been reported by these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75d83788b2c2a9ef2abd963ba02879b4
https://doi.org/10.1109/ted.2011.2104962
https://doi.org/10.1109/ted.2011.2104962
Autor:
Augustin Cathignol, Antoine Cros, Samuel Harrison, Robin Cerrutti, Philippe Coronel, Arnaud Pouydebasque, Krysten Rochereau, Thomas Skotnicki, Gerard Ghibaudo
Publikováno v:
2006 European Solid-State Device Research Conference; 2006, p379-382, 4p