Zobrazeno 1 - 10
of 47
pro vyhledávání: '"August F. Witt"'
Publikováno v:
Journal of Crystal Growth. 118:277-286
Single crystal growth in the Heusler alloy system Ni 3- x Mn x Sn was explored using the Czochralski technique. For x close to 1.0, single crystals (as indicated by X-ray Laue pictures and metallography) were grown under an Ar atmosphere, in vitreous
Autor:
Michael J. Wargo, August F. Witt
Publikováno v:
Journal of Crystal Growth. 116:213-224
A real time thermal imaging system with temperature resolution better than +/- 0.5 C and spatial resolution of better than 0.5 mm has been developed. It has been applied to the analysis of melt surface thermal field distributions in both Czochralski
Autor:
August F. Witt, D.J. Carlson
Publikováno v:
Journal of Crystal Growth. 108:508-518
The dopant distribution in 〈100〉 Si-doped GaAs was quantitatively analyzed using NIR transmittance measurements with a spatial resolution of better than 2 μm. Microsegregation inhomogeneities, in the form of striations, are found to be random an
Publikováno v:
Journal of Crystal Growth. 102:21-30
Czochralski growth of the system PtMn x Sb 2− x was investigated to explore its magnetic semiconducting potential. Using the LEC technique, PtSb 2 single crystals, p-type with ~ 10 18 carriers cm -3 , were obtained from BN crucibles; doping with Te
Autor:
Ching-Fuh Lin, August F. Witt
Publikováno v:
Journal of Crystal Growth. 140:444-446
Dislocations in Bi 12 SiO 20 (BSO) crystals, annealed in a reducing atmosphere, were directly observed by conventional light microscopy in transmission mode. A one-to-one correspondence between dislocations and etch pits was observed.
Autor:
August F. Witt, X.Z. Cao
Publikováno v:
Journal of Crystal Growth. 114:255-257
An optical method is described for identifying dislocation etch pits in n-type GaAS, using near-IR brightfield transmission microscopy. Dislocations are revealed in a nondestructive manner through contrasts that are likely due to impurity decoration
Autor:
X.Z. Cao, August F. Witt
Publikováno v:
Journal of Crystal Growth. 112:838-840
Using NIR transmission microscopy with dark field illumination and computational image processing, it was possible to reveal decorated dislocations in doped n-type and doped as well as undoped SI GaAs. The NIR analysis is characterized by simplicity
Autor:
August F. Witt
The stated objectives of this research effort were directed at: (1) The establishment of magnetic LP-LEC growth capability with diameters approaching 4 inches; (2) The design of heat and mass transfer control systems required for optimization of grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::271d60156ef3388ebdc67905bd0f0cdf
https://doi.org/10.21236/ada262361
https://doi.org/10.21236/ada262361
Publikováno v:
SPIE Proceedings.
Elemental and compound semiconductors were characterized using new optical approach based on NIR microscopy in conjunction with computational image analysis and contrast enhancement. The approach made it possible to perform a quantitative microsegreg
Publikováno v:
Journal of The Electrochemical Society. 125:1832-1840