Zobrazeno 1 - 10
of 11
pro vyhledávání: '"August Arnal"'
Autor:
Marc Porti, Gerard Palau, Albert Crespo-Yepes, August Arnal Rus, Simon Ogier, Eloi Ramon, Montserrat Nafria
Publikováno v:
Micromachines, Vol 15, Iss 4, p 443 (2024)
Given the current maturity of printed technologies, Organic Thin-Film Transistors (OTFT) still show high initial variability, which can be beneficial for its exploitation in security applications. In this work, the process-related variability and agi
Externí odkaz:
https://doaj.org/article/f135aef7506f4cc9b817766e580d436c
Publikováno v:
Crystals, Vol 9, Iss 7, p 333 (2019)
It is well known that organic thin film transistor (OTFT) parameters can be shifted depending on the geometry of the device. In this work, we present two different transistor geometries, interdigitated and Corbino, which provide differences in the ke
Externí odkaz:
https://doaj.org/article/8f51835bf86a444e8989b2adfe64fa4c
Akademický článek
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Autor:
August Arnal, Simone Dehm, Eloi Ramon, Gabriel Cadilha Marques, Anushka Birla, Jasmin Aghassi-Hagmann, Mehdi B. Tahoori
Publikováno v:
IEEE Transactions on Electron Devices. 67:3146-3151
Electrolyte-gated thin-film transistors (EGTs) with indium oxide channel, and expected lifetime of three months, enable low-voltage operation (~1 V) in the field of printed electronics (PEs). The channel width of our printed EGTs is varied between 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a3760d848e871b5ed14176788ef8d4
https://doi.org/10.1109/ted.2020.3002208
https://doi.org/10.1109/ted.2020.3002208
Autor:
Adrianus Matthew Sukuramsyah, Jasmin Aghassi-Hagmann, Mehdi B. Tahoori, Gabriel Cadilha Marques, Surya Abhishek Singaraju, Yaroslav E. Romanyuk, Eloi Ramon, August Arnal Rus, Abdessalem Aribia, Xiaowei Feng, Sami Bolat
Publikováno v:
IEEE Electron Device Letters. 41:187-190
Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c7ed664ba627f9690eacc2859cf4e8
https://doi.org/10.1109/led.2019.2956346
https://doi.org/10.1109/led.2019.2956346
Publikováno v:
Organic Electronics. 108:106574
Organic Electronics provides multiple technological advantages such as low cost, flexibility, solution processability and waste reduction through the use of new materials and alternative fabrication techniques in the microelectronic world. The use of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccced291d00fe031f7f4891480b09f01
https://doi.org/10.1016/j.orgel.2022.106574
https://doi.org/10.1016/j.orgel.2022.106574
Publikováno v:
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC).
Organic Electronics (OE) provides certain technological advantages such as low price and waste reduction through the use of new materials and alternative fabrication techniques in the microelectronic world. The use of additive and printed fabrication
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eafeef355056362bd64b62c37cb95e6
https://doi.org/10.1109/estc48849.2020.9229883
https://doi.org/10.1109/estc48849.2020.9229883
Autor:
Rosana Rodriguez, Lluis Teres, August Arnal, Eloi Ramon, Albert Crespo-Yepes, Montserrat Nafria
Publikováno v:
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Universitat Autònoma de Barcelona
Organic Devices offer low-cost manufacturing and better flexibility, sustainability and solution-processability than their Si-based MOS counterparts, which make them suitable for new applications where those characteristics are an advantage. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2a39ebbcc1ac7006c4cd59df45a006d
https://ddd.uab.cat/record/248843
https://ddd.uab.cat/record/248843
Publikováno v:
Flexible and Printed Electronics. 6:033001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::507f2fbc6916f6d15dfde10b4efae5fe
https://doi.org/10.1088/2058-8585/ac1d39
https://doi.org/10.1088/2058-8585/ac1d39