Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Audrey R. Silva"'
Autor:
Alfredo R. Vaz, Audrey R. Silva, Frederico H. Cioldin, José Alexandre Diniz, Hugo S. Alvarez, Luana C. J. Espinola
Publikováno v:
Journal of Microelectromechanical Systems. 30:668-674
In this work, thermally evaporated aluminum (Al) was used as hardmask (HM) to obtain silicon microchannels (SiMCs), using an Inductively Coupled Plasma - Reactive Ion Etching (ICP-RIE) system, in SF6/Ar gas mixture environment. The channel depth must
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fede28d50ef4b4f141aa1fe026b30be
https://doi.org/10.1109/jmems.2021.3088640
https://doi.org/10.1109/jmems.2021.3088640
Publikováno v:
IEEE Journal of Photovoltaics. 11:570-574
Periodic V-grooves channels, upright, and inverted pyramids structures were texturized on monocrystalline silicon (c-Si) substrates using ammonium hydroxide (NH4OH) solution. This cheap and CMOS compatible etching solution aims at the integration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::236c1c52a7cf0aa7d64d4dbcd7704837
https://doi.org/10.1109/jphotov.2021.3059421
https://doi.org/10.1109/jphotov.2021.3059421
Autor:
Frederico H. Cioldin, Larissa Zagati, Lucas Stucchi Zucchi, Audrey R. Silva, Alfredo R. Vaz, Hugo S. Alvarez, Luana C.J. Espindola, José Alexandre Diniz
Publikováno v:
Resumos do....
Este trabalho apresenta o desenvolvimento da corrosao do Silicio usando solucao de NH4OH para obtencao de nano fios de Si (com dimensoes menores do que 100 nm) que sao usados como canal de conducao de corrente eletrica de transistores FinFET, que sao
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04feb122c1349e9ef32878a13927f991
https://doi.org/10.20396/revpibic2720192988
https://doi.org/10.20396/revpibic2720192988
Publikováno v:
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro).
Junctionless-Field-Effect-Transistor (JL-FET) devices were fabricated with Silicon-On-Insulator (SOI) technology. The device channel area was thinned down to nanometer-scale by silicon etching in a solution of NH 4 OH with the area to be exposed defi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::026bd38a1a5a64b4c52c1ee8fd7c3cdd
https://doi.org/10.1109/sbmicro.2019.8919301
https://doi.org/10.1109/sbmicro.2019.8919301
Autor:
Guilherme M. B. Soares, Frederico H. Cioldin, Jose Godoy Filho, Audrey R. Silva, Ioshiaki Doi, José Alexandre Diniz, Lucas Stucchi Zucchi, Luana C.J. Espindola
Publikováno v:
2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro).
In this work, instead of TMAH (Tetra Methyl Ammonium Hydroxide), ammonium hydroxide (NH 4 OH) solutions are used to get silicon nano (SiNWs) or sub-micron (SiSMWs) wires, because also these solutions are silicon orientation-dependent wet etching and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a38e2788e5fbeeb0e91e13c1c04523d8
https://doi.org/10.1109/sbmicro.2018.8511599
https://doi.org/10.1109/sbmicro.2018.8511599
Autor:
Alfredo R. Vaz, José Alexandre Diniz, Frederico Cloidin, Lucas Stucchi-Zucchi, Audrey R. Silva, Luana C.J. Espindola
Publikováno v:
2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro).
Junctionless-FET (JL-FET) devices were fabricated on SOI substrate using NH$_{\mathbf{4}}$ OH as means to thin the channel substrate. The devices gate dielectric was silicon oxynitride grown using O$_{\mathbf{2}} {/\mathbf{N}}_{\mathbf{2}}$ ECR (Elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b78818ffcef0c997398f00cc191b3ab
https://doi.org/10.1109/sbmicro.2018.8511382
https://doi.org/10.1109/sbmicro.2018.8511382
Publikováno v:
Energy Procedia. 44:132-137
This work presents the development of photovoltaic cells based on p+/n junction in Si substrates, aimed at compatibility with fabrication processes with CMOS technology. The compatible processes, which are developed in this study, are the techniques:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9581fec3ba16cb3999be23791ba0ab5
Autor:
Audrey R. Silva, Juliana Miyoshi, F. A. Cavarsan, José Alexandre Diniz, Lucas P. B. Lima, J. Godoy Filho, Ioshiaki Doi
Publikováno v:
Microelectronic Engineering. 92:140-144
Titanium-aluminum oxynitride (TAON) has been used as high-k gate dielectric for planar MOS devices (capacitors and transistors) and obtained by Ti/Al e-beam evaporation, with additional electron cyclotron resonance (ECR) plasma oxynitridation on Si s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::036863b0b4d014a83d199db37252cc79
https://doi.org/10.1016/j.mee.2011.05.015
https://doi.org/10.1016/j.mee.2011.05.015
Autor:
José Alexandre Diniz, Ioshiaki Doi, Audrey R. Silva, Lucas P. B. Lima, Juliana Miyoshi, José Godoy Fo
Publikováno v:
ECS Transactions. 39:69-75
TaN films have been used as gate electrodes in MOS capacitors, which were fabricated with 18 nm thick SiO2 as gate dielectric, and in Schottky diodes on n-type Si (100) substrates. TaN layer presented electrical resistivity of 327 μΩ.cm and poly cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::138c384b90eb562815e079252424918e
https://doi.org/10.1149/1.3615178
https://doi.org/10.1149/1.3615178
Autor:
Luis A. M. Barea, Newton C. Frateschi, Leandro Tiago Manera, S. Arismar Cerqueira, José Alexandre Diniz, M. V. P. dos Santos, Audrey R. Silva, A. R. do Nascimento
Publikováno v:
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro).
Silicon nitride films deposited by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) at room temperature are proposed for nonlinear optics applications in the telecommunications C-band. Numerical simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4aeabc1028ea3b0aa78e8214f4a5c02
https://doi.org/10.1109/sbmicro.2014.6940088
https://doi.org/10.1109/sbmicro.2014.6940088